Datasheet

 2014-2016 Microchip Technology Inc. DS20005308C-page 3
MCP16331
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
V
IN,
SW ............................................................... -0.5V to 54V
BOOST – GND ................................................... -0.5V to 60V
BOOST – SW Voltage........................................ -0.5V to 6.0V
V
FB
Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (V
IN
+ 0.3V)
Output Short-Circuit Current .................................Continuous
Power Dissipation .......................................Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied ......-40°C to +125°C
Operating Junction Temperature...................-40°C to +160°C
ESD Protection on All Pins:
HBM.....................................................................4 kV
MM ......................................................................300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at those or any other conditions above those indi
-
cated in the operational sections of this specification is
not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
– V
SW
= 3.3V, 
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 x 10 µF X7R Ceramic Capacitors.
Boldface specifications apply over the T
A
range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Voltage V
IN
4.4 — 50 V Note 1
Feedback Voltage V
FB
0.784 0.800 0.816 V
Output Voltage Adjust Range V
OUT
2.0 — 24 V Note 1, Note 3
Feedback Voltage 
Line Regulation
|V
FB
/V
FB
)/V
IN
| — 0.002 0.1 %/V V
IN
= 5V to 50V
Feedback Voltage 
Load Regulation
|V
FB
/V
FB
| — 0.13 0.35 % I
OUT
= 50 mA to
500
mA
Feedback Input Bias Current I
FB
— +/- 3 — nA
Undervoltage Lockout Start UVLO
STRT
— 4.1 4.4 V V
IN
rising
Undervoltage Lockout Stop UVLO
STOP
3 3.6 — V V
IN
falling
Undervoltage Lockout 
Hysteresis
UVLO
HYS
— 0.5 — V
Switching Frequency f
SW
425 500 550 kHz
Maximum Duty Cycle DC
MAX
90 93 — % V
IN
= 5V; V
FB
= 0.7V;
I
OUT
= 100 mA
Minimum Duty Cycle DC
MIN
— 1 — % Note 4
NMOS Switch-On Resistance R
DS(ON)
— 0.6 —  V
BOOST
– V
SW
= 5V,
Note 3
NMOS Switch Current Limit I
N(MAX)
— 1.3 — A V
BOOST
– V
SW
= 5V,
Note 3
Quiescent Current I
Q
— 1 1.7 mA V
IN
= 12V; Note 2
Quiescent Current – Shutdown I
Q
— 6 10 A V
OUT
= EN = 0V
Output Current I
OUT
500 — — mA Note 1; see Figure 2-9
Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range.
2: V
BOOST
supply is derived from V
OUT
.
3: Determined by characterization, not production tested.
4: This is ensured by design.