Datasheet

MCP1631/HV/MCP1631V/VHV
DS22063B-page 6 © 2008 Microchip Technology Inc.
External Reference Input
Reference Voltage Input V
REF
0—AV
DD
V The reference input is capable of
rail-to-rail operation.
Internal Driver)
R
DSON
P-channel R
DSon_P
—7.215Ω
R
DSON
N-channel R
DSon_N
—3.815Ω
V
EXT
Rise Time T
RISE
—2.518nsC
L
= 100 pF
Typical for V
IN
=5V (Note 1)
V
EXT
Fall Time T
FALL
—2.718nsC
L
= 100 pF
Typical for V
IN
=5V (Note 1)
Error Amplifier (A1)
Input Offset Voltage V
OS
-5 -0.6 +5 mV
A1 Input Bias Current I
BIAS
—0.051µA
Error Amplifier PSRR PSRR — 85.4 — dB V
IN
= 3.0V to 5.0V, V
CM
=1.2V
Common Mode Input Range V
CM
GND - 0.3 — V
IN
V
Common Mode Rejection Ratio — 90 — dB V
IN
=5V, V
CM
= 0V to 2.5V
Open-loop Voltage Gain A
VOL
80 95 — dB R
L
=5kΩ to V
IN
/2,
100 mV < V
EAOUT
< V
IN
- 100 mV,
V
CM
=1.2V
Low-level Output V
OL
— 25 GND + 65 mV RL = 5 kΩ to V
IN
/2
Gain Bandwidth Product GBWP — 3.5 — MHz V
IN
=5V
Error Amplifier Sink Current I
SINK
412—mAV
IN
=5V, V
REF
=1.2V,
V
FB
=1.4V, V
COMP
=2.0V
Error Amplifier Source Current I
SOURCE
-2 -9.8 — mA V
IN
=5V, V
REF
=1.2V,
V
FB
=1.0V, V
COMP
=2.0V,
Absolute Value
Current Sense (CS) Amplifier (A2)
Input Offset Voltage V
OS
-3.0 1.2 +3.0 mV
CS Input Bias Current I
BIAS
—0.131µA
CS Amplifier PSRR PSRR — 65 — dB V
IN
= 3.0V to 5.0V, V
CM
= 0.12V,
GAIN = 10
Closed-loop Voltage Gain A2
VCL
—10—V/VR
L
=5kΩ to V
IN
/2,
100 mV < V
OUT
< V
IN
- 100 mV,
V
CM
= +0.12V
Low-level Output V
OL
5 11 GND + 50 mV RL = 5 kΩ to V
IN
/2
CS Sink Current I
SINK
517.7—mA
CS Amplifier Source Current I
SOURCE
-5 -19.5 — mA
Voltage Sense (VS) Amplifier (A3)
Input Offset Voltage V
OS
-5 0.9 +5 mV
VS Input Bias Current I
BIAS
—0.0011µA
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 µF,
V
DD
for typical values = 5.0V, T
A
for typical values = +25°C, T
A
= -40°C to +125°C for all minimum and maximums.
Parameters Sym Min Typ Max Units Conditions
Note 1: External Oscillator Input (OSC
IN
) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum V
IN
must meet two conditions: V
IN
≥ 3.5V and V
IN
≥ (V
OUT(MAX)
+ V
DROPOUT(MAX)
).
3: TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
* ΔTemperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 3.5V, whichever is greater.