Datasheet

© 2008 Microchip Technology Inc. DS22063B-page 5
MCP1631/HV/MCP1631V/VHV
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN
- GND (MCP1631/V)................................................+6.5V
V
IN
- GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (V
DD
+ 0.3V)
LX to GND............................................. -0.3V to (V
DD
+ 0.3V)
V
EXT
Output Short Circuit Current ........................ Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 µF,
V
DD
for typical values = 5.0V, T
A
for typical values = +25°C, T
A
= -40°C to +125°C for all minimum and maximums.
Parameters Sym Min Typ Max Units Conditions
Input Characteristics
Input Voltage (MCP1631/V) V
DD
3.0 — 5.5 V Non-HV Options
Input Voltage
(MCP1631HV/VHV)
V
DD
3.5 — 16.0 V HV Options (Note 2)
Undervoltage Lockout
(MCP1631/V)
UVLO 2.7 2.8 3.0 V V
IN
Falling, V
EXT
low when input
below UVLO threshold
Undervoltage Lockout Hysteresis
(MCP1631/MCP1631V)
UVLO
_HYS
40 64 100 mV UVLO Hysteresis
Input Quiescent Current
(MCP1631/V, MCP1631HV,VHV)
I(V
IN
)—3.75mASHDN=V
DD
=OSC
DIS
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
I
IN_SHDN
—
2.4
4.4
12
17
µA
µA
SHDN
=GND=OSC
DIS
,
Note: Amplifier A3 remains
powered during Shutdown.
OSC
IN
, OSC
DIS
and SHDN Input Levels
Low Level Input Voltage V
IL
——0.8V
High Level Input Voltage V
IH
2.0 — — V
Input Leakage Current I
LEAK
0.005 1 µA
External Oscillator Range F
OSC
— — 2 MHz Maximum operating frequency is
dependent upon circuit topology
and duty cycle.
Minimum Oscillator High Time
Minimum Oscillator Low Time
T
OH
_MIN.
T
OL
_MIN.
—10—ns
Oscillator Rise and Fall Time T
R
and T
F
0.01 — 10 µs Note 1
Oscillator Input Capacitance C
OSC
—5—pf
Note 1: External Oscillator Input (OSC
IN
) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum V
IN
must meet two conditions: V
IN
≥ 3.5V and V
IN
≥ (V
OUT(MAX)
+ V
DROPOUT(MAX)
).
3: TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
* ΔTemperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 3.5V, whichever is greater.