Datasheet

 2004-2013 Microchip Technology Inc. DS21921C-page 5
MCP1612
TEMPERATURE SPECIFICATIONS
Protection Features
Undervoltage Lockout UVLO 2.4 2.55 2.7 V Note 2
Undervoltage Lockout Hysteresis UVLO-
HYS
— 200 — mV
Thermal Shutdown T
SHD
— 160 — °C Note 1
Thermal Shutdown Hysteresis T
SHD-HYS
—9—°C
Interface Signal (SHDN
)
Logic-High Input V
IN-HIGH
45 ——% of V
IN
Logic-Low Input V
IN-LOW
——15 % of V
IN
Electrical Specifications: V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 µF. T
A
= -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Storage Temperature Range T
A
-65 — +150 °C Continuous
Maximum Junction Temperature T
J
— — +150 °C Transient Only
Operating Junction Temperature Range T
A
- 40 — + 125 °C Continuous Operation
Thermal Package Resistances
Thermal Resistance, 8L-MSOP 
JA
— 208 — °C/W Typical 4-layer board interconnecting
vias
Thermal Resistance, 8L-DFN

JA
— 41 — °C/W Typical 4-layer board interconnecting
vias
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V
IN
= V
CC
= V
SHDN
= 3.3V, V
OUT
= 1.8V, C
IN
= C
OUT
= 10 µF, L = 3.3 µH,
I
LOAD
= 100 mA, T
A
= +25°C. Boldface specifications apply over the T
A
range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: The integrated MOSFET switches have an integral diode from the L
X
pin to V
IN
and from L
X
to P
GND
. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to regulate the junction temperature for these cases.
2: UVLO is specified for a falling V
IN
. Once the UVLO is activated, the UVLO-
HYS
must be overcome before the device will
return to operation.