Datasheet

MCP1612
DS21921C-page 4  2004-2013 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN
– A
GND
.......................................................................6.0V
(SHDN
, FB, V
CC
, Comp........... (A
GND
– 0.3V) to (V
IN
+ 0.3V)
L
X
to P
GND
.............................................. -0.3V to (V
IN
+ 0.3V)
P
GND
to A
GND
...................................................-0.3V to +0.3V
Output Short Circuit Current .................................Continuous
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM)  4kV
ESD protection on all pins (MM)300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V
IN
= V
CC
= V
SHDN
= 3.3V, V
OUT
= 1.8V, C
IN
= C
OUT
= 10 µF, L = 3.3 µH,
I
LOAD
= 100 mA, T
A
= +25°C. Boldface specifications apply over the T
A
range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Input Voltage
Input Operating Voltage V
IN
2.7 — 5.5 V
Input Shutdown Current I(V
IN
) — 0.01 1 µA Shutdown mode (SHDN = GND)
Input Quiescent Current I(V
IN
)— 5 7mAI
LOAD
= 0 mA
Oscillator Characteristics
Internal Oscillator Frequency F
OSC
1.2 1.4 1.6 MHz
Internal Power Swicthes
R
DSon
P-Channel R
DSon-P
— 300 — m I
P
= 250 mA
R
DSon
N-Channel R
DSon-N
— 300 — m I
N
= 250 mA
L
X
Pin Leakage Current I
LX
-1 — 1 µA SHDN = 0V, V
IN
= 5.5V, L
X
= 0V,
L
X
= 5.5V
Positive Current Limit Threshold +I
LX(MAX)
—2.3— A
Negative Current Limit Threshold -I
LX(MAX)
—-1.4— A
Feedback Characteristics
Transconductance from FB to
COMP
g
m
35 62 90 µA/V
Output Voltage
Output Voltage Range V
OUT
0.8 — V
IN
V
Reference Feedback Voltage V
FB
0.78 0.8 0.82 V
Feedback Input Bias Current I
VFB
—1—nA
Line Regulation V
LINE-REG
— 0.15 0.5 %/V V
IN
= 2.7V to 5.5V, I
LOAD
= 100 mA
Load Regulation V
LOAD-REG
—0.25— %V
IN
= 4.2V, I
LOAD
= 100 mA to 1A
Note 1: The integrated MOSFET switches have an integral diode from the L
X
pin to V
IN
and from L
X
to P
GND
. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to regulate the junction temperature for these cases.
2: UVLO is specified for a falling V
IN
. Once the UVLO is activated, the UVLO-
HYS
must be overcome before the device will
return to operation.