Datasheet

© 2007 Microchip Technology Inc. DS22061A-page 5
MCP1602
Output Voltage Tolerance Fixed V
OUT
-2.5 V
R
+2.5 % Note 3
Line Regulation V
LINE-
REG
—0.3—%/VV
IN
= V
R
+ 1V to 5.5V,
I
OUT
=100mA
Load Regulation V
LOAD-
REG
—0.4— %V
IN
=V
R
+1.5V,
I
LOAD
= 100 mA to 500 mA, Note 1
Internal Oscillator Frequency F
OSC
1.6 2.0 2.4 MHz
Start Up Time T
SS
—0.5— msT
R
= 10% to 90%
R
DSon
P-Channel R
DSon-P
— 450 — mΩ I
P
=100mA
R
DSon
N-Channel R
DSon-N
— 450 — mΩ I
N
= 100 mA
L
X
Pin Leakage Current I
LX
-1.0 ±0.01 1.0 µA SHDN =0V, V
IN
= 5.5V, L
X
=0V,
L
X
=5.5V
Positive Current Limit Threshold +I
LX(MAX)
— 700 — mA Note 7
Power-Good (PG)
Voltage Range V
PG
1.0
1.2
—5.5
5.5
VT
A
= 0°C to +70°C
T
A
= -40°C to +85°C
V
IN
≤ 2.7V, I
SINK
= 100 µA
PG Threshold High V
TH_H
—9496 % of
V
OUT
On Rising V
OUT
PG Threshold Low V
TH_L
89 92 — % of
V
OUT
On Falling V
OUT
PG Threshold Hysteresis V
TH_HYS
—2—% of
V
OUT
PG Threshold Tempco ΔV
TH
/ΔT— 30 —ppm/°C
PG Delay t
RPD
— 165 — µs V
OUT
=(V
TH_H
+ 100 mV) to
(V
TH_L
- 100 mV)
PG Active Time-out Period t
RPU
140 262 560 ms V
OUT
=(V
TH_L
-100mV) to
(V
TH_H
+100mV), I
SINK
=1.2mA
PG Output Voltage Low PG_V
OL
——0.2 VV
OUT
=V
TH_L
-100mV,
I
PG
= 1.2 mA, V
IN
>2.7V
I
PG
= 100 µA, 1.0 < V
IN
<2.7V
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
IN
= 3.6V, C
OUT
= C
IN
= 4.7 µF, L = 4.7 µH,
V
OUT
(ADJ) = 1.8V, I
OUT
= 100 mA, T
A
= +25°C. Boldface specifications apply for the T
A
range of -40
o
C to +85
o
C.
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ V
OUT
+ 0.5V.
2: Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.
3: V
R
is the output voltage setting.
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load
regulation is tested over a load range of 0.1 mA to the maximum specified output current. Changes in
output voltage due to heating effects are covered by the thermal regulation specification.
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
, θ
JA
). Exceeding the maximum
allowable power dissipation causes the device to initiate thermal shutdown.
6: The internal MOSFET switches have an integral diode from the L
X
pin to the V
IN
pin, and from the L
X
pin
to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits
must be adhered too. Thermal protection is not able to limit the junction temperature for these cases.
7: The current limit threshold is a cycle-by-cycle current limit.