Datasheet

MCP14700
DS22201B-page 6 2009-2013 Microchip Technology Inc.
Switching Times
HIGHDR Rise Time t
RH
—10nsC
L
=3.3nF, Note 1, Note 2
LOWDR Rise Time t
RL
—10nsC
L
=3.3nF, Note 1, Note 2
HIGHDR Fall Time t
FH
—10nsC
L
=3.3nF, Note 1, Note 2
LOWDR Fall Time t
FL
—6.0nsC
L
=3.3nF, Note 1, Note 2
HIGHDR Turn-off Propagation
Delay
t
PDLH
20 27 36 ns No Load, Note 1, Note 2
LOWDR Turn-off Propagation
Delay
t
PDLL
10 17 25 ns No Load, Note 1, Note 2
HIGHDR Turn-on Propagation
Delay
t
PDHH
20 27 36 ns No Load, Note 1, Note 2
LOWDR Turn-on Propagation
Delay
t
PDHL
10 17 25 ns No Load, Note 1, Note 2
Protection Requirements
Thermal Shutdown T
SHDN
—147°CNote 1
Thermal Shutdown Hysteresis T
SHDN_HYS
—20°CNote 1
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V
CC
= 5.0V, T
J
= -40°C to +125°C
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Parameter ensured by characterization, not production tested.
2: See Figure 4-1 and Figure 4-2 for parameter definition.
TEMPERATURE CHARACTERISTICS
Unless otherwise noted, all parameters apply with V
CC
=5.0V
Parameter Sym. Min. Typ. Max. Units Comments
Temperature Ranges
Maximum Junction Temperature T
J
+150 °C
Storage Temperature T
A
-65 +150 °C
Specified Temperature Range T
A
-40 +125 °C
Package Thermal Resistances
Thermal Resistance, 8L-3x3 DFN
JA
64 °C/W Typical four-layer board with
vias to ground plane
JC
—12—°C/W
Thermal Resistance, 8L-SOIC
JA
—163—°C/W
JC
—42—°C/W