Datasheet

© 2007 Microchip Technology Inc. DS22022B-page 11
MCP1403/4/5
Placing a ground plane beneath the MCP1403/4/5 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
4.5 Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
4.5.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
4.5.2 QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1403/4/5 devices have a quiescent current
draw when both inputs are high of 1.0 mA (typ) and
0.15 mA (typ) when both inputs are low. The quiescent
power dissipation is:
4.5.3 OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
P
T
P
L
P
Q
P
CC
++=
Where:
P
T
= Total power dissipation
P
L
= Load power dissipation
P
Q
= Quiescent power dissipation
P
CC
= Operating power dissipation
P
L
fC
T
× V
DD
2
×=
Where:
f = Switching frequency
C
T
= Total load capacitance
V
DD
= MOSFET driver supply voltage
P
Q
I
QH
DI
QL
1 D()×+×()V
DD
×=
Where:
I
QH
= Quiescent current in the high state
D = Duty cycle
I
QL
= Quiescent current in the low state
V
DD
= MOSFET driver supply voltage
P
CC
CC f× V
DD
×=
Where:
CC = Cross-conduction constant (A*sec)
f = Switching frequency
V
DD
= MOSFET driver supply voltage