Datasheet

MCP1256/7/8/9
DS21989B-page 4  2006-2013 Microchip Technology Inc.
MCP1256 and MCP1257 Devices
SLEEP Mode Input - SLEEP
SLEEP Input Voltage Low V
IL(SLEEP)
——0.4V
SLEEP
Input Voltage High V
IH(SLEEP)
1.4 — — V
SLEEP
Input Leakage
Current
I
LK(SLEEP)
— 0.001 0.1 µA
SLEEP
Quiescent Current I
Q
—1020µAV
SLEEP
= 0V, I
OUT
= 0 mA
MCP1256 and MCP1258 Devices
Power-Good Output - PGOOD
PGOOD Threshold V
TH
— 93 — % Percent of V
OUT
Falling
PGOOD Hysteresis V
HYS
—110—mVV
OUT
Rising
PGOOD Output Low
Voltage
V
OL
— 25 100 mV I
SINK
= 0.5 mA, V
IN
= 1.8V
PGOOD Input Leakage
Current
I
LK(PGOOD)
—0.02 1µAV
PGOOD
= V
IN
MCP1257 and MCP1259
Low-Battery Output - LBO
LBO Threshold V
TH
—1.95—VV
IN
Falling
LBO
Hysteresis V
HYS
— 240 — mV V
IN
Rising
LBO
Output Low Voltage V
OL
— 25 100 mV I
SINK
= 0.5 mA, V
IN
= 1.8V
LBO
Input Leakage Current I
LK(LBO)
—0.02 1µAV
LBO
= V
IN
MCP1258 and MCP1259
BYPASS Mode Input - BYPASS
BYPASS Input Voltage Low V
IL(BYPASS)
——0.4V
BYPASS
Input Voltage
High
V
IH(BYPASS)
1.4 — — V
BYPASS
Input Leakage
Current
I
LK(BYPASS)
— 0.001 0.1 µA
BYPASS
Quiescent
Current
I
Q
—0.25 2µAV
BYPASS
= 0V, I
OUT
= 0 mA,
T
J
= +25°C
BYPASS
Input-to-Output
Impedance
R
BYPASS
—1.5— V
IN
= 2.4V
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for V
IN
= 1.8V to 3.6V, SHDN = V
IN
, C
IN
= C
OUT
= 10 µF,
C
1
= C
2
= 1µF, I
OUT
= 10 mA, T
J
= -40°C to +125°C. Typical values are at T
J
= +25°C.
Parameters Sym Min Typ Max
Unit
s
Conditions