Datasheet

KSZ8081RNA/RND
DS00002199A-page 36  2016 Microchip Technology Inc.
6.0 ELECTRICAL CHARACTERISTICS
T
A
= 25°C. Specification is for packaged product only.
TABLE 6-1: ELECTRICAL CHARACTERISTICS
Parameters Symbol Min. Typ. Max. Units Note
Supply Current (V
DDIO
, V
DDA_3.3
= 3.3V), Note 6-1
10BASE-T I
DD1_3.3V
— 41 — mA Full-duplex traffic @ 100% utilization
100BASE-TX I
DD2_3.3V
— 47 — mA Full-duplex traffic @ 100% utilization
EDPD Mode I
DD3_3.3V
—20—mA
Ethernet cable disconnected
(Reg. 18h.11 = 0)
Power-Down Mode I
DD4_3.3V
—4—mA
Software power-down
(Reg. 0h.11 = 1)
CMOS Level Inputs
Output High Voltage V
OH
2.4 — — V V
DDIO
= 3.3V
2.0 — — V V
DDIO
= 2.5V
1.5 — — V V
DDIO
= 1.8V
Output Low Voltage V
OL
——0.4V V
DDIO
= 3.3V
——0.4V V
DDIO
= 2.5V
——0.3V V
DDIO
= 1.8V
Output Tri-State Leakage |I
OZ
|——10µA —
LED Output
Output Drive Current I
LED
— 8 — mA LED0 pin
All Pull-Up/Pull-Down Pins (including Strapping Pins)
Internal Pull-Up Resistance pu
30 45 73 k V
DDIO
= 3.3V
39 61 102 k V
DDIO
= 2.5V
48 99 178 k V
DDIO
= 1.8V
Internal Pull-Down
Resistance
pd
26 43 79 k V
DDIO
= 3.3V
34 59 113 k V
DDIO
= 2.5V
53 99 200 k V
DDIO
= 1.8V
100BASE-TX Transmit (measured differentially after 1:1 transformer)
Peak Differential Output
Voltage
V
O
0.95 — 1.05 V
100 termination across differential
output
Output Voltage Imbalance V
IMB
—— 2 %
100 termination across differential
output
Rise/Fall Time t
r
/t
f
3—5ns —
Rise/Fall Time Imbalance — 0 — 0.5 ns —
Duty Cycle Distortion — — — ±0.25 ns —
Overshoot — — — 5 % —
Output Jitter — — 0.7 — ns Peak-to-peak
10BASE-T Transmit (measured differentially after 1:1 transformer)
Peak Differential Output
Voltage
V
P
2.2 — 2.8 V
100 termination across differential
output
Jitter Added — — — 3.5 ns Peak-to-peak
Rise/Fall Time t
r
/t
f
—25—ns —
10BASE-T Receive
Squelch Threshold V
SQ
— 400 — mV 5 MHz square wave
Transmitter - Drive Setting
Reference Voltage of I
SET
V
SET
—0.65— V R(I
SET
) = 6.49 k