Datasheet

PIC32MX330/350/370/430/450/470
DS60001185C-page 282  2012-2013 Microchip Technology Inc.
TABLE 30-12: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial 
-40°C  T
A  +105°C for V-temp
Param.
No.
Symbol Characteristics Min. Typical
(1)
Max. Units Conditions
Program Flash Memory
(3)
D130 EP Cell Endurance 20,000 — — E/W —
D131 VPR VDD for Read 2.3 — 3.6 V —
D132 VPEW VDD for Erase or Write 2.3 — 3.6 V —
D134 T
RETD Characteristic Retention 20 — — Year Provided no other specifications
are violated
D135 I
DDP Supply Current during
Programming
—10 —mA —
T
WW Word Write Cycle Time 44 — 59 µs —
D136 TRW Row Write Cycle Time
(2)
2.8 3.3 3.8 ms —
D137 T
PE Page Erase Cycle Time 22 — 29 ms —
TCE Chip Erase Cycle Time 86 — 116 ms —
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 8 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus loads
are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The default
Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to the “PIC32 Flash Programming Specification” (DS60001145) for operating conditions during
programming and erase cycles.
TABLE 30-13: DC CHARACTERISTICS: PROGRAM FLASH MEMORY WAIT STATE
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial 
-40°C  TA  +105°C for V-temp
Required Flash Wait States SYSCLK Units Conditions
0 Wait State
0-40 MHz -40ºC to +85ºC
0-30 MHz -40ºC to +105ºC
1 Wait State
41-80 MHz -40ºC to +85ºC
31-60 MHz -40ºC to +105ºC
2 Wait States
81-100 MHz -40ºC to +85ºC
61-80 MHz -40ºC to +105ºC