Datasheet

dsPIC33FJ06GS101/X02 and dsPIC33FJ16GSX02/X04
DS70318F-page 332 © 2008-2012 Microchip Technology Inc.
25.1 High Temperature DC Characteristics
TABLE 25-1: OPERATING MIPS VS. VOLTAGE
Note 1: Overall functional device operation at VBORMIN < VDD < VDDMIN is tested but not characterized. All device
analog modules such as the ADC, etc., will function but with degraded performance below VDDMIN. Refer to
BO10 in Table 24-11 for BOR values.
TABLE 25-2: THERMAL OPERATING CONDITIONS
TABLE 25-3: DC TEMPERATURE AND VOLTAGE SPECIFICATIONS
Characteristic
V
DD Range
(in Volts)
Temperature Range
(in °C)
Max MIPS
dsPIC33FJ06GS101/X02 and
dsPIC33FJ16GSX02/X04
—
3.0V to 3.6V
(1)
-40°C to +150°C 20
Rating Symbol Min Typ Max Unit
High Temperature Devices
Operating Junction Temperature Range TJ -40 — +155 °C
Operating Ambient Temperature Range T
A -40 — +150 °C
Power Dissipation:
Internal chip power dissipation:
PINT = VDD x (IDD - Σ IOH)
P
D PINT + PI/O W
I/O Pin Power Dissipation:
I/O = Σ ({V
DD - VOH} x IOH) + Σ (VOL x IOL)
Maximum Allowed Power Dissipation P
DMAX (TJ - TA)/θJA W
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +150°C for High Temperature
Parameter
No.
Symbol Characteristic Min Typ Max Units Conditions
Operating Voltage
HDC10 Supply Voltage
V
DD — 3.0 3.3 3.6 V -40°C to +150°C