Datasheet

dsPIC33EPXXXGP50X, dsPIC33EPXXXMC20X/50X AND PIC24EPXXXGP/MC20X
DS70657G-page 466  2011-2013 Microchip Technology Inc.
31.1 High-Temperature DC Characteristics
TABLE 31-1: OPERATING MIPS VS. VOLTAGE
TABLE 31-2: THERMAL OPERATING CONDITIONS
TABLE 31-3: DC TEMPERATURE AND VOLTAGE SPECIFICATIONS
Characteristic
V
DD Range
(in Volts)
Temperature Range
(in °C)
Max MIPS
dsPIC33EPXXXGP50X,
dsPIC33EPXXXMC20X/50X and
PIC24EPXXXGP/MC20X
HDC5 3.0 to 3.6V
(1)
-40°C to +150°C 40
Note 1: Device is functional at V
BORMIN < VDD < VDDMIN. Analog modules, such as the ADC, may have degraded
performance. Device functionality is tested but not characterized.
Rating Symbol Min Typ Max Unit
High-Temperature Devices
Operating Junction Temperature Range T
J -40 — +155 °C
Operating Ambient Temperature Range TA -40 — +150 °C
Power Dissipation:
Internal Chip Power Dissipation:
P
INT = VDD x (IDD –  IOH)
PD PINT + PI/O W
I/O Pin Power Dissipation:
I/O =  ({V
DD – VOH} x IOH) +  (VOL x IOL)
Maximum Allowed Power Dissipation PDMAX (TJ – TA)/JA W
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +150°C
Parameter
No.
Symbol Characteristic Min Typ Max Units Conditions
Operating Voltage
HDC10 Supply Voltage
V
DD — 3.0 3.3 3.6 V -40°C to +150°C