Datasheet

dsPIC33EPXXXGP50X, dsPIC33EPXXXMC20X/50X AND PIC24EPXXXGP/MC20X
DS70657G-page 410  2011-2013 Microchip Technology Inc.
TABLE 30-14: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial
-40°C  T
A  +125°C for Extended
Param
No.
Symbol Characteristic Min. Typ.
(1)
Max. Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 10,000 — — E/W -40C to +125C
D131 VPR VDD for Read 3.0 — 3.6 V
D132b V
PEW VDD for Self-Timed Write 3.0 — 3.6 V
D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications
are violated, -40C to +125C
D135 I
DDP Supply Current during
Programming
(2)
—10 —mA
D136 I
PEAK Instantaneous Peak Current
During Start-up
——150mA
D137a T
PE Page Erase Time 17.7 — 22.9 ms TPE = 146893 FRC cycles,
T
A = +85°C (See Note 3)
D137b T
PE Page Erase Time 17.5 — 23.1 ms TPE = 146893 FRC cycles,
T
A = +125°C (See Note 3)
D138a TWW Word Write Cycle Time 41.7 — 53.8 µs TWW = 346 FRC cycles,
T
A = +85°C (See Note 3)
D138b TWW Word Write Cycle Time 41.2 — 54.4 µs TWW = 346 FRC cycles,
T
A = +125°C (See Note 3)
Note 1: Data in “Typical” column is at 3.3V, +25°C unless otherwise stated.
2: Parameter characterized but not tested in manufacturing.
3: Other conditions: FRC = 7.37 MHz, TUN<5:0> = 011111 (for Minimum), TUN<5:0> = 100000 (for
Maximum). This parameter depends on the FRC accuracy (see Table 30-19) and the value of the FRC
Oscillator Tuning register (see Register 9-4). For complete details on calculating the Minimum and
Maximum time, see Section 5.3 “Programming Operations”.