Datasheet

dsPIC33EPXXXGP50X, dsPIC33EPXXXMC20X/50X AND PIC24EPXXXGP/MC20X
DS70657G-page 400 2011-2013 Microchip Technology Inc.
30.1 DC Characteristics
TABLE 30-1: OPERATING MIPS VS. VOLTAGE
Characteristic
V
DD Range
(in Volts)
Temp Range
(in °C)
Maximum MIPS
dsPIC33EPXXXGP50X,
dsPIC33EPXXXMC20X/50X and
PIC24EPXXXGP/MC20X
3.0V to 3.6V
(1)
-40°C to +85°C 70
3.0V to 3.6V
(1)
-40°C to +125°C 60
Note 1: Device is functional at V
BORMIN < VDD < VDDMIN. Analog modules (ADC, op amp/comparator and
comparator voltage reference) may have degraded performance. Device functionality is tested but not
characterized. Refer to Parameter BO10 in Table 30-13 for the minimum and maximum BOR values.
TABLE 30-2: THERMAL OPERATING CONDITIONS
Rating Symbol Min. Typ. Max. Unit
Industrial Temperature Devices
Operating Junction Temperature Range T
J -40 +125 °C
Operating Ambient Temperature Range TA -40 +85 °C
Extended Temperature Devices
Operating Junction Temperature Range T
J -40 +140 °C
Operating Ambient Temperature Range TA -40 +125 °C
Power Dissipation:
Internal chip power dissipation:
P
INT = VDD x (IDD IOH)
PD PINT + PI/O W
I/O Pin Power Dissipation:
I/O = ({V
DD – VOH} x IOH) + (VOL x IOL)
Maximum Allowed Power Dissipation PDMAX (TJ – TA)/JA W
TABLE 30-3: THERMAL PACKAGING CHARACTERISTICS
Characteristic Symbol Typ. Max. Unit Notes
Package Thermal Resistance, 64-Pin QFN
JA 28.0 °C/W 1
Package Thermal Resistance, 64-Pin TQFP 10x10 mm JA 48.3 °C/W 1
Package Thermal Resistance, 44-Pin QFN
JA 29.0 °C/W 1
Package Thermal Resistance, 44-Pin TQFP 10x10 mm
JA 49.8 °C/W 1
Package Thermal Resistance, 44-Pin VTLA 6x6 mm
JA 25.2 °C/W 1
Package Thermal Resistance, 36-Pin VTLA 5x5 mm
JA 28.5 °C/W 1
Package Thermal Resistance, 28-Pin QFN-S
JA 30.0 °C/W 1
Package Thermal Resistance, 28-Pin SSOP
JA 71.0 °C/W 1
Package Thermal Resistance, 28-Pin SOIC
JA 69.7 °C/W 1
Package Thermal Resistance, 28-Pin SPDIP JA 60.0 °C/W 1
Note 1: Junction to ambient thermal resistance, Theta-JA (JA) numbers are achieved by package simulations.