Datasheet

© 2010 Microchip Technology Inc. DS70135G-page 185
dsPIC30F4011/4012
TABLE 24-10: ELECTRICAL CHARACTERISTICS: BOR
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ TA ≤ +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
BO10 V
BOR BOR Voltage on
VDD Transition
High-to-Low
(2)
BORV = 11
(3)
— — — V Not in operating range
BORV = 10 2.6 — 2.71 V
BORV = 01 4.1 — 4.4 V
BORV = 00 4.58 — 4.73 V
BO15 V
BHYS —5—mV
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
2: These parameters are characterized but not tested in manufacturing.
3: ‘11’ values not in usable operating range.
TABLE 24-11: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ TA ≤ +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Data EEPROM Memory
(2)
D120 ED Byte Endurance 100K 1M — E/W -40° C ≤ TA ≤ +85°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write,
VMIN = Minimum operating voltage
D122 TDEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP
D123 T
RETD Characteristic Retention 40 100 — Year Provided no other specifications are
violated
D124 IDEW IDD During Programming — 10 30 mA Row Erase
Program Flash Memory
(2)
D130 EP Cell Endurance 10K 100K — E/W -40° C ≤ TA ≤ +85°C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating voltage
D132 V
EB VDD for Bulk Erase 4.5 — 5.5 V
D133 V
PEW VDD for Erase/Write 3.0 — 5.5 V
D134 TPEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP
D135 T
RETD Characteristic Retention 40 100 — Year Provided no other specifications are
violated
D137 I
PEW IDD During Programming — 10 30 mA Row Erase
D138 I
EB IDD During Programming — 10 30 mA Bulk Erase
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2: These parameters are characterized but not tested in manufacturing.