Datasheet

© 2006 Microchip Technology Inc. Preliminary DS70178C-page 239
dsPIC30F1010/202X
TABLE 21-9: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 3.3V and 5.0V (±10%)
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ T
A ≤ +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
V
OL Output Low Voltage
(2)
DO10 I/O ports — — 0.6 V IOL = 8.5 mA, VDD = 5V
——TBDVIOL = 2.0 mA, VDD = 3.3V
DO16 OSC2/CLKO — — 0.6 V IOL = 1.6 mA, VDD = 5V
(RC or EC Osc mode) — — TBD V I
OL = 2.0 mA, VDD = 3.3V
VOH Output High Voltage
(2)
DO20 I/O ports VDD – 0.7 — — V IOH = -3.0 mA, VDD = 5V
TBD — — V I
OH = -2.0 mA, VDD = 3.3V
DO26 OSC2/CLKO VDD – 0.7 — — V IOH = -1.3 mA, VDD = 5V
(RC or EC Osc mode) TBD — — V IOH = -2.0 mA, VDD = 3.3V
Capacitive Loading Specs
on Output Pins
(2)
DO50 COSC2 OSC2 pin — — 15 pF In HS mode when external
clock is used to drive OSC1.
DO56 C
IO All I/O pins and OSC2 — — 50 pF RC or EC Osc mode
DO58 CB SCL, SDA — — 400 pF In I
2
C mode
Legend: TBD = To Be Determined
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
2: These parameters are characterized but not tested in manufacturing.
TABLE 21-10: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 3.3V and 5.0V (±10%)
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ T
A ≤ +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Program Flash Memory
(2)
D130 EP Cell Endurance 10K 100K — E/W
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
EB VDD for Bulk Erase 4.5 — 5.5 V
D133 VPEW VDD for Erase/Write 3.0 — 5.5 V
D134 T
PEW Erase/Write Cycle Time — 2 — ms
D135 TRETD Characteristic Retention 40 100 — Year Provided no other specifications
are violated
D136 T
EB ICSP Block Erase Time — 4 — ms
D137 IPEW IDD During Programming — 10 30 mA Row Erase
D138 IEB IDD During Programming — 10 30 mA Bulk Erase
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2: These parameters are characterized but not tested in manufacturing.