Datasheet
© 2010 Microchip Technology Inc. DS70139G-page 159
dsPIC30F2011/2012/3012/3013
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ TA ≤ +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Data EEPROM Memory
(2)
D120 ED Byte Endurance 100K 1M — E/W -40° C ≤ TA ≤ +85°C
D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to Read/Write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP
D123 T
RETD Characteristic Retention 40 100 — Year Provided no other specifications
are violated
D124 IDEW IDD During Programming — 10 30 mA Row Erase
Program Flash Memory
(2)
D130 EP Cell Endurance 10K 100K — E/W -40° C ≤ TA ≤ +85°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
EB VDD for Bulk Erase 4.5 — 5.5 V
D133 VPEW VDD for Erase/Write 3.0 — 5.5 V
D134 T
PEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP
D135 T
RETD Characteristic Retention 40 100 — Year Provided no other specifications
are violated
D137 IPEW IDD During Programming — 10 30 mA Row Erase
D138 I
EB IDD During Programming — 10 30 mA Bulk Erase
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2: These parameters are characterized but not tested in manufacturing.