Datasheet

© 2010 Microchip Technology Inc. DS70139G-page 159
dsPIC30F2011/2012/3012/3013
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature -40°C TA +85°C for Industrial
-40°C TA +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Data EEPROM Memory
(2)
D120 ED Byte Endurance 100K 1M E/W -40° C TA +85°C
D121 VDRW VDD for Read/Write VMIN 5.5 V Using EECON to Read/Write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP
D123 T
RETD Characteristic Retention 40 100 Year Provided no other specifications
are violated
D124 IDEW IDD During Programming 10 30 mA Row Erase
Program Flash Memory
(2)
D130 EP Cell Endurance 10K 100K E/W -40° C TA +85°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
EB VDD for Bulk Erase 4.5 5.5 V
D133 VPEW VDD for Erase/Write 3.0 5.5 V
D134 T
PEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP
D135 T
RETD Characteristic Retention 40 100 Year Provided no other specifications
are violated
D137 IPEW IDD During Programming 10 30 mA Row Erase
D138 I
EB IDD During Programming 10 30 mA Bulk Erase
Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2: These parameters are characterized but not tested in manufacturing.