Datasheet

PIC24FJ128GC010 FAMILY
DS30009312B-page 432  2012-2013 Microchip Technology Inc.
TABLE 37-9: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 2.0V to 3.6V (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
V
OL Output Low Voltage
DO10 I/O Ports — — 0.4 V IOL = 6.6 mA, VDD = 3.6V
——0.4VIOL = 5.0 mA, VDD = 2V
DO16 OSCO/CLKO — — 0.4 V I
OL = 6.6 mA, VDD = 3.6V
——0.4VIOL = 5.0 mA, VDD = 2V
VOH Output High Voltage
DO20 I/O Ports 3.0 — — V I
OH = -3.0 mA, VDD = 3.6V
2.4 — — V IOH = -6.0 mA, VDD = 3.6V
1.65 — — V IOH = -1.0 mA, VDD = 2V
1.4 — — V I
OH = -3.0 mA, VDD = 2V
DO26 OSCO/CLKO 2.4 — — V IOH = -6.0 mA, VDD = 3.6V
1.4 — — V IOH = -1.0 mA, VDD = 2V
Note 1: Data in the “Typ” column is at 3.3V, +25°C unless otherwise stated.
TABLE 37-10: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.0V to 3.6V (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 20000 — — E/W -40C to +85C
D131 V
PR VDD for Read VMIN —3.6 VVMIN = Minimum operating voltage
D132B VDD for Self-Timed Write VMIN —3.6 VVMIN = Minimum operating voltage
D133A TIW Self-Timed Word Write
Cycle Time
—20—s
Self-Timed Row Write
Cycle Time
—1.5—ms
D133B T
IE Self-Timed Page Erase
Time
20 — 40 ms
D134 T
RETD Characteristic Retention 20 — — Year If no other specifications are violated
D135 I
DDP Supply Current During
Programming
—5—mA
Note 1: Data in the “Typ” column is at 3.3V, +25°C unless otherwise stated.