Datasheet
2012 Microchip Technology Inc. DS30575A-page 637
PIC18F97J94 FAMILY
TABLE 31-8: DC CHARACTERISTICS: CTMU CURRENT SOURCE SPECIFICATIONS
TABLE 31-9: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions: 2V to 3.6V
Operating temperature -40°C T
A +85°C for Industrial
Param
No.
Sym Characteristic Min Typ
(1)
Max Units Conditions
I
OUT1 CTMU Current Source,
Base Range
— 550 — nA CTMUCON1<1:0> = 01
I
OUT2 CTMU Current Source,
10x Range
—5.5—A CTMUCON1<1:0> = 10
I
OUT3 CTMU Current Source,
100x Range
—55—A CTMUCON1<1:0> = 11
Note 1: Nominal value at center point of current trim range (CTMUCON1<7:2> = 000000).
DC CHARACTERISTICS
Standard Operating Conditions
Operating temperature -40°C T
A +85°C for Industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110 VPP Voltage on MCLR/VPP Pin VDD + 1.5 — 10 V (Note 2, Note 3)
D113 IDDP Supply Current During
Programming
——10mA
Program Flash Memory
D130 E
P Cell Endurance 1K 20K — E/W -40C to +85C
D131 V
PR VDD for Read
2—3.6V
D132B VPEW Voltage for Self-Timed Erase or
Write Operations V
DD
2 — 3.6 V PIC18FXXKXX devices
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D133B TIE Self-Timed Block Erased Cycle
Time
—33—ms
D134 T
RETD Characteristic Retention 10 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
——10mA
D140 T
WE Writes per Erase Cycle — — 1 For each physical address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Required only if single-supply programming is disabled.
3: The MPLAB
®
ICD 2 does not support variable VPP output. Circuitry to limit the MPLAB ICD 2 VPP voltage
must be placed between the MPLAB ICD 2 and the target system when programming or debugging with
the MPLAB ICD 2.