Datasheet

82
XMEGA B3 [DATASHEET]
8074D–AVR–08/2013
36.13 Flash and EEPROM Memory Characteristics
Table 36-18. Endurance and data retention.
Table 36-19. Programming time.
Notes: 1. Programming is timed from the 2MHz internal oscillator.
2. EEPROM is not erased if the EESAVE fuse is programmed.
36.14 Clock and Oscillator Characteristics
36.14.1 Calibrated 32.768kHz Internal Oscillator characteristics
Table 36-20. Calibrated 32.768kHz internal oscillator characteristics.
Symbol Parameter Condition Min Typ Max Units
Flash
Write/Erase cycles
25°C 10K
Cycle
85°C 10K
Data retention
25°C 100
Year
55°C 25
EEPROM
Write/Erase cycles
25°C 100K
Cycle
85°C 100K
Data retention
25°C 100
Year
55°C 25
Symbol Parameter Condition Min Typ
(1)
Max Units
Chip Erase
128KB Flash, EEPROM
(2)
75
ms
64KB Flash, EEPROM
(2)
55
Flash
Page Erase 4
msPage Write 4
Page Write Automatic Page Erase and Write 8
EEPROM
Page Erase 4
msPage Write 4
Page Write Automatic Page Erase and Write 8
Symbol Parameter Condition Min Typ Max Units
Frequency 32.768 kHz
Factory calibrated accuracy T = 85C, V
CC
= 3.0V -0.5 0.5 %
User calibration accuracy -0.5 0.5 %