Datasheet

76
[Not recommended for new designs - Use XMEGA A1U series] XMEGA A1 [DATASHEET]
8067O–AVR–06/2013
34.4 Flash and EEPROM Memory Characteristics
Table 34-3. Endurance and data retention.
Table 34-4. Programming time.
Notes: 1. Programming is timed from the internal 2 MHz oscillator.
2. EEPROM is not erased if the EESAVE fuse is programmed.
34.5 ADC Characteristics
Table 34-5. ADC characteristics
Symbol Parameter Condition Min Typ Max Units
Flash
Write/Erase cycles
25°C 10K
Cycle
85°C 10K
Data retention
25°C 100
Year
55°C 25
EEPROM
Write/Erase cycles
25°C 80K
Cycle
85°C 30K
Data retention
25°C 100
Year
55°C 25
Symbol Parameter Condition Min Typ
(1)
Max Units
Chip Erase Flash, EEPROM
(2)
and SRAM Erase 40
ms
Flash
Page Erase 4
Page Write 6
Page WriteAutomatic Page Erase and Write 12
EEPROM
Page Erase 4
Page Write 6
Page Write Automatic Page Erase and Write 12
Symbol Parameter Condition Min Typ Max Units
RES Resolution Programmable: 8/12 8 12 12 Bits
INL Integral Non-Linearity 500 kS/s -5 <±1 5 LSB
DNL Differential Non-Linearity 500 kS/s < ±0.75 LSB
Gain Error ±10 mV
Offset Error ±2 mV
ADC
clk
ADC Clock frequency
Max is 1/4 of
Peripheral Clock
V
CC
2.0V 2000
kHz
V
CC
<2.0V 500