Datasheet

722
32133D–11/2011
UC3D
Notes: 1. V
VDD
corresponds to either V
VDDIN
or V
VDDIO
, depending on the supply for the pin. Refer to Section 3.2 on page 8 for details.
2. These values are based on simulation and characterization of other AVR microcontrollers manufactured in the same pro-
cess technology. These values are not covered by test limits in production.
Notes: 1. V
VDD
corresponds to either V
VDDIN
or V
VDDIO
, depending on the supply for the pin. Refer to Section 3.2 on page 8 for details.
2. These values are based on simulation and characterization of other AVR microcontrollers manufactured in the same pro-
cess technology. These values are not covered by test limits in production.
3. PB16-VBUS pad has no pull-up resistance
V
OH
Output high-level voltage V
VDD
= 3.0V, I
OH
= 6mA V
VDD
- 0.4 V
I
OL
Output low-level current V
VDD
= 3.0V 16 mA
I
OH
Output high-level current V
VDD
= 3.0V 16 mA
F
MAX
Output frequency
V
VDD
= 3.0V, load = 10 pF 471 MHz
V
VDD
= 3.0V, load = 30 pF 249 MHz
t
RISE
Rise time, all High-drive
I/O pins
V
VDD
= 3.0V, load = 10 pF 0.86 ns
V
VDD
= 3.0V, load = 30 pF 1.70 ns
t
FALL
Fall time
V
VDD
= 3.0V, load = 10 pF 1.06 ns
V
VDD
= 3.0V, load = 30 pF 2.01 ns
I
LEAK
Input leakage current Pull-up resistors disabled 1 µA
C
IN
Input capacitance, TQFP48 package 2 pF
Table 32-7. High-drive I/O Pin Characteristics
(1)
Symbol Parameter Condition Min Typ Max Units
Table 32-8. PB14-DP, PB15-DM Pins Characteristics
Symbol Parameter Condition Min Typ Max Units
R
PULLUP
Pull-up resistance 50 100 150 kOhm
Table 32-9. PB16-VBUS Pin Characteristics
(1)
Symbol Parameter Condition Min Typ Max Units
R
PULLUP
(3)
Pull-up resistance kOhm
V
IL
Input low-level voltage V
VDD
= 3.0V -0.3 +0.8 V
V
IH
Input high-level voltage V
VDD
= 3.6V +2 V
VDD
+ 0.3 V
I
LEAK
Input leakage current 5.5V, pull-up resistors disabled 1 µA
C
IN
Input capacitance 48 pin packages 0.6 pF