Datasheet

169
8183F–AVR–06/12
ATtiny24A/44A/84A
Figure 19-4. Addressing the Flash which is Organized in Pages
Figure 19-5. High-voltage Serial Programming Waveforms
19.7.5 Programming the EEPROM
The EEPROM is organized in pages, see Table 20-11 on page 180. When programming the
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to Table 19-16 on page 170):
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Pro-
gramming” cycle to finish.
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
programmed.
5. End Page Programming by Loading Command “No Operation”.
PROGRAM MEMORY
WORD ADDRESS
WITHIN A PAGE
PAGE ADDRESS
WITHIN THE FLASH
INSTRUCTION WORD
PAGE
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
PAGE
PCWORDPCPAGE
PCMSB
PAGEMSB
PROGRAM
COUNTER
MSB
MSB
MSB LSB
LSB
LSB
012345678910
SDI
PA6
SII
PA5
SDO
PA4
SCI
PB0