Datasheet

164
8183F–AVR–06/12
ATtiny24A/44A/84A
7. At the end of the programming session, RESET can be set high to commence normal
operation.
8. Power-off sequence (if needed):
Set RESET
to “1”.
Turn V
CC
power off.
19.5.2 Serial Programming Instruction set
The instruction set is described in Table 19-12 and Figure 19-2 on page 165.
Table 19-11. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
t
WD_ERASE
9.0 ms
t
WD_FUSE
4.5 ms
Table 19-12. Serial Programming Instruction Set
Instruction/Operation
(1)
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4
Programming Enable $AC $53 $00 $00
Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00
Poll RDY/BSY $F0 $00 $00 data byte out
Load Instructions
Load Extended Address byte $4D $00 Extended adr $00
Load Program Memory Page, High byte $48 adr MSB adr LSB high data byte in
Load Program Memory Page, Low byte $40 adr MSB adr LSB low data byte in
Load EEPROM Memory Page (page access) $C1 $00 adr LSB data byte in
Read Instructions
Read Program Memory, High byte $28 adr MSB adr LSB high data byte out
Read Program Memory, Low byte $20 adr MSB adr LSB low data byte out
Read EEPROM Memory $A0 $00 adr LSB data byte out
Read Lock bits $58 $00 $00 data byte out
Read Signature Byte $30 $00 adr LSB data byte out
Read Fuse bits $50 $00 $00 data byte out
Read Fuse High bits $58 $08 $00 data byte out
Read Extended Fuse Bits $50 $08 $00 data byte out
Read Calibration Byte $38 $00 $00 data byte out
Write Instructions
(6)
Write Program Memory Page $4C adr MSB adr LSB $00
Write EEPROM Memory $C0 $00 adr LSB data byte in
Write EEPROM Memory Page (page access) $C2 $00 adr LSB $00