Datasheet

245
ATtiny828 [DATASHEET]
8371A–AVR–08/12
Notes: 1. Not all instructions are applicable for all parts.
2. a = address.
3. Instructions accessing program memory use a word address. This address may be random within the page range.
4. Word addressing.
5. To ensure future compatibility, unused fuses and lock bits should be unprogrammed (‘1’) .
If the LSB of RDY/BSY
data byte out is ‘1’, a programming operation is still pending. Wait until this bit returns ‘0’ before
the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see Figure 100 on page 245.
Figure 100. Serial Programming Instruction example
23.4 Programming Time for Flash and EEPROM
Flash and EEPROM wait times are listed in Table 102 on page 246.
Write Fuse bits
(5)
$AC $A0 $00 data byte in
Write Fuse High bits
(5)
$AC $A8 $00 data byte in
Write Fuse Extended Bits
(5)
$AC $A4 $00 data byte in
Instruction/Operation
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4
Byte 1 Byte 2 Byte 3 Byte 4
Adr MSB
Adr LSB
Bit 15 B 0
Serial Programming Instruction
Program Memory/
EEPROM Memory
Page 0
Page 1
Page 2
Page N-1
Page Buffer
Write Program Memory Page/
Write EEPROM Memory Page
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Byte 1 Byte 2 Byte 3 Byte 4
Bit 15 B 0
Adr MSB Adr LSB
Page Offset
Page Number
Adr
dr M
r MS
SB
A
A
Adr
dr LS
LSB
SB