Datasheet

181
8197C–AVR–05/11
ATtiny261A/461A/861A
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to “Programming the Flash” on page 178 for details on Command, Address and
Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
5. E: Latch data (give PAGEL a positive pulse).
6. K: Repeat 3 through 5 until the entire buffer is filled.
7. L: Program EEPROM page
a. Set BS to “0”.
b. Give WR
a negative pulse. This starts programming of the EEPROM page.
RDY/BSY
goes low.
c. Wait until to RDY/BSY
goes high before programming the next page (See Figure
18-6 for signal waveforms).
Figure 18-6. Programming the EEPROM Waveforms
18.7.7 Reading the Flash
The algorithm for reading the Flash memory is as follows (refer to “Programming the Flash” on
page 178 for details on Command and Address loading):
1. A: Load Command “0000 0010”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE
to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS to “1”. The Flash word high byte can now be read at DATA.
6. Set OE
to “1”.
RDY/BSY
WR
OE
RESET +12V
0x11 ADDR. HIGH
DATA
ADDR. LOW DATA ADDR. LOW DATA XX
XA1/BS2
XA0
PAGEL/BS1
XTAL1
XX
AGBCEB C EL
K