Datasheet

155
2586D–AVR–02/06
ATtiny25/45/85
23.6.2 Serial Programming Instruction set
Table 23-10 on page 155 and Figure 23-2 on page 156 describes the Instruction set.
Table 23-9. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
t
WD_ERASE
4.0 ms
t
WD_FUSE
4.5 ms
Table 23-10. Serial Programming Instruction Set
Instruction/Operation
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4
Programming Enable $AC $53 $00 $00
Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00
Poll RDY/BSY
$F0 $00 $00 data byte out
Load Instructions
Load Extended Address byte
(1)
$4D $00 Extended adr $00
Load Program Memory Page, High byte $48 adr MSB adr LSB high data byte in
Load Program Memory Page, Low byte $40 adr MSB adr LSB low data byte in
Load EEPROM Memory Page (page access) $C1 $00 0000 000aa data byte in
Read Instructions
Read Program Memory, High byte $28 adr MSB adr LSB high data byte out
Read Program Memory, Low byte $20 adr MSB adr LSB low data byte out
Read EEPROM Memory $A0 $00 00aa aaaa data byte out
Read Lock bits $58 $00 $00 data byte out
Read Signature Byte $30 $00 0000 000aa data byte out
Read Fuse bits $50 $00 $00 data byte out
Read Fuse High bits $58 $08 $00 data byte out
Read Extended Fuse Bits $50 $08 $00 data byte out
Read Calibration Byte $38 $00 $00 data byte out
Write Instructions
Write Program Memory Page $4C adr MSB adr LSB $00
Write EEPROM Memory $C0 $00 00aa aaaa data byte in
Write EEPROM Memory Page (page access) $C2 $00 00aa aa00 $00
Write Lock bits $AC $E0 $00 data byte in