Datasheet

170
8006H–AVR–10/09
ATtiny24/44/84
Figure 19-4. Addressing the Flash which is Organized in Pages
Figure 19-5. High-voltage Serial Programming Waveforms
19.7.5 Programming the EEPROM
The EEPROM is organized in pages, see Table 20-12 on page 183. When programming the
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to Table 19-16 on page 171):
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
ming” cycle to finish.
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
programmed.
5. End Page Programming by Loading Command “No Operation”.
PROGRAM MEMORY
WORD ADDRESS
WITHIN A PAGE
PAGE ADDRESS
WITHIN THE FLASH
INSTRUCTION WORD
PAGE
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
PAGE
PCWORDPCPAGE
PCMSB
PAGEMSB
PROGRAM
COUNTER
MSB
MSB
MSBLSB
LSB
LSB
0123 45678910
SDI
PB0
SII
PB1
SDO
PB2
SCI
PB3