Datasheet
Table Of Contents
- Features
- 1. Pin Configurations
- 2. Overview
- 3. About
- 4. CPU Core
- 5. Memories
- 6. Clock System
- 7. Power Management and Sleep Modes
- 8. System Control and Reset
- 9. Interrupts
- 10. I/O Ports
- 11. 8-bit Timer/Counter0 with PWM
- 11.1 Features
- 11.2 Overview
- 11.3 Clock Sources
- 11.4 Counter Unit
- 11.5 Output Compare Unit
- 11.6 Compare Match Output Unit
- 11.7 Modes of Operation
- 11.8 Timer/Counter Timing Diagrams
- 11.9 Register Description
- 11.9.1 TCCR0A – Timer/Counter Control Register A
- 11.9.2 TCCR0B – Timer/Counter Control Register B
- 11.9.3 TCNT0 – Timer/Counter Register
- 11.9.4 OCR0A – Output Compare Register A
- 11.9.5 OCR0B – Output Compare Register B
- 11.9.6 TIMSK0 – Timer/Counter 0 Interrupt Mask Register
- 11.9.7 TIFR0 – Timer/Counter 0 Interrupt Flag Register
- 12. 16-bit Timer/Counter1
- 12.1 Features
- 12.2 Overview
- 12.3 Timer/Counter Clock Sources
- 12.4 Counter Unit
- 12.5 Input Capture Unit
- 12.6 Output Compare Units
- 12.7 Compare Match Output Unit
- 12.8 Modes of Operation
- 12.9 Timer/Counter Timing Diagrams
- 12.10 Accessing 16-bit Registers
- 12.11 Register Description
- 12.11.1 TCCR1A – Timer/Counter1 Control Register A
- 12.11.2 TCCR1B – Timer/Counter1 Control Register B
- 12.11.3 TCCR1C – Timer/Counter1 Control Register C
- 12.11.4 TCNT1H and TCNT1L – Timer/Counter1
- 12.11.5 OCR1AH and OCR1AL – Output Compare Register 1 A
- 12.11.6 OCR1BH and OCR1BL – Output Compare Register 1 B
- 12.11.7 ICR1H and ICR1L – Input Capture Register 1
- 12.11.8 TIMSK1 – Timer/Counter Interrupt Mask Register 1
- 12.11.9 TIFR1 – Timer/Counter Interrupt Flag Register 1
- 13. Timer/Counter Prescaler
- 14. USI – Universal Serial Interface
- 15. Analog Comparator
- 16. Analog to Digital Converter
- 16.1 Features
- 16.2 Overview
- 16.3 Operation
- 16.4 Starting a Conversion
- 16.5 Prescaling and Conversion Timing
- 16.6 Changing Channel or Reference Selection
- 16.7 ADC Noise Canceler
- 16.8 Analog Input Circuitry
- 16.9 Noise Canceling Techniques
- 16.10 ADC Accuracy Definitions
- 16.11 ADC Conversion Result
- 16.12 Temperature Measurement
- 16.13 Register Description
- 17. debugWIRE On-chip Debug System
- 18. Self-Programming the Flash
- 18.1 Performing Page Erase by SPM
- 18.2 Filling the Temporary Buffer (Page Loading)
- 18.3 Performing a Page Write
- 18.4 Addressing the Flash During Self-Programming
- 18.5 EEPROM Write Prevents Writing to SPMCSR
- 18.6 Reading Lock, Fuse and Signature Data from Software
- 18.7 Preventing Flash Corruption
- 18.8 Programming Time for Flash when Using SPM
- 18.9 Register Description
- 19. Memory Programming
- 19.1 Program And Data Memory Lock Bits
- 19.2 Fuse Bytes
- 19.3 Device Signature Imprint Table
- 19.4 Page Size
- 19.5 Serial Programming
- 19.6 High-voltage Serial Programming
- 19.7 High-Voltage Serial Programming Algorithm
- 19.7.1 Enter High-voltage Serial Programming Mode
- 19.7.2 Considerations for Efficient Programming
- 19.7.3 Chip Erase
- 19.7.4 Programming the Flash
- 19.7.5 Programming the EEPROM
- 19.7.6 Reading the Flash
- 19.7.7 Reading the EEPROM
- 19.7.8 Programming and Reading the Fuse and Lock Bits
- 19.7.9 Reading the Signature Bytes and Calibration Byte
- 19.7.10 Power-off sequence
- 20. Electrical Characteristics
- 21. Typical Characteristics
- 21.1 Supply Current of I/O Modules
- 21.2 Active Supply Current
- 21.3 Idle Supply Current
- 21.4 Power-down Supply Current
- 21.5 Standby Supply Current
- 21.6 Pin Pull-up
- 21.7 Pin Driver Strength
- 21.8 Pin Threshold and Hysteresis
- 21.9 BOD Threshold and Analog Comparator Offset
- 21.10 Internal Oscillator Speed
- 21.11 Current Consumption of Peripheral Units
- 21.12 Current Consumption in Reset and Reset Pulsewidth
- 22. Register Summary
- 23. Instruction Set Summary
- 24. Ordering Information
- 25. Packaging Information
- 26. Errata
- 27. Datasheet Revision History
- Table of Contents

22
8006K–AVR–10/10
ATtiny24/44/84
old value and program the new value) or to split the Erase and Write operations in two different
operations. The Programming times for the different modes are shown in Table 5-1.
When EEPE is set any write to EEPMn will be ignored. During reset, the EEPMn bits will be
reset to 0b00 unless the EEPROM is busy programming.
• Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I-bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready Interrupt generates a constant inter-
rupt when Non-volatile memory is ready for programming.
• Bit 2 – EEMPE: EEPROM Master Program Enable
The EEMPE bit determines whether writing EEPE to one will have effect or not.
When EEMPE is set, setting EEPE within four clock cycles will program the EEPROM at the
selected address. If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles.
• Bit 1 – EEPE: EEPROM Program Enable
The EEPROM Program Enable Signal EEPE is the programming enable signal to the EEPROM.
When EEPE is written, the EEPROM will be programmed according to the EEPMn bits setting.
The EEMPE bit must be written to one before a logical one is written to EEPE, otherwise no
EEPROM write takes place. When the write access time has elapsed, the EEPE bit is cleared
by hardware. When EEPE has been set, the CPU is halted for two cycles before the next
instruction is executed.
• Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal – EERE – is the read strobe to the EEPROM. When the cor-
rect address is set up in the EEAR Register, the EERE bit must be written to one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed. The user should poll the EEPE bit before starting the read opera-
tion. If a write operation is in progress, it is neither possible to read the EEPROM, nor to change
the EEAR Register.
Table 5-1. EEPROM Programming Mode Bits and Programming Times
EEPM1 EEPM0 Programming Time Operation
0 0 3.4 ms Erase and Write in one operation (Atomic Operation)
0 1 1.8 ms Erase Only
1 0 1.8 ms Write Only
1 1 – Reserved for future use