Datasheet
Table Of Contents
- Features
- 1. Pin Configurations
- 2. Overview
- 3. About
- 4. CPU Core
- 5. Memories
- 6. Clock System
- 7. Power Management and Sleep Modes
- 8. System Control and Reset
- 9. Interrupts
- 10. I/O Ports
- 11. 8-bit Timer/Counter0 with PWM
- 11.1 Features
- 11.2 Overview
- 11.3 Clock Sources
- 11.4 Counter Unit
- 11.5 Output Compare Unit
- 11.6 Compare Match Output Unit
- 11.7 Modes of Operation
- 11.8 Timer/Counter Timing Diagrams
- 11.9 Register Description
- 11.9.1 TCCR0A – Timer/Counter Control Register A
- 11.9.2 TCCR0B – Timer/Counter Control Register B
- 11.9.3 TCNT0 – Timer/Counter Register
- 11.9.4 OCR0A – Output Compare Register A
- 11.9.5 OCR0B – Output Compare Register B
- 11.9.6 TIMSK0 – Timer/Counter 0 Interrupt Mask Register
- 11.9.7 TIFR0 – Timer/Counter 0 Interrupt Flag Register
- 12. 16-bit Timer/Counter1
- 12.1 Features
- 12.2 Overview
- 12.3 Timer/Counter Clock Sources
- 12.4 Counter Unit
- 12.5 Input Capture Unit
- 12.6 Output Compare Units
- 12.7 Compare Match Output Unit
- 12.8 Modes of Operation
- 12.9 Timer/Counter Timing Diagrams
- 12.10 Accessing 16-bit Registers
- 12.11 Register Description
- 12.11.1 TCCR1A – Timer/Counter1 Control Register A
- 12.11.2 TCCR1B – Timer/Counter1 Control Register B
- 12.11.3 TCCR1C – Timer/Counter1 Control Register C
- 12.11.4 TCNT1H and TCNT1L – Timer/Counter1
- 12.11.5 OCR1AH and OCR1AL – Output Compare Register 1 A
- 12.11.6 OCR1BH and OCR1BL – Output Compare Register 1 B
- 12.11.7 ICR1H and ICR1L – Input Capture Register 1
- 12.11.8 TIMSK1 – Timer/Counter Interrupt Mask Register 1
- 12.11.9 TIFR1 – Timer/Counter Interrupt Flag Register 1
- 13. Timer/Counter Prescaler
- 14. USI – Universal Serial Interface
- 15. Analog Comparator
- 16. Analog to Digital Converter
- 16.1 Features
- 16.2 Overview
- 16.3 Operation
- 16.4 Starting a Conversion
- 16.5 Prescaling and Conversion Timing
- 16.6 Changing Channel or Reference Selection
- 16.7 ADC Noise Canceler
- 16.8 Analog Input Circuitry
- 16.9 Noise Canceling Techniques
- 16.10 ADC Accuracy Definitions
- 16.11 ADC Conversion Result
- 16.12 Temperature Measurement
- 16.13 Register Description
- 17. debugWIRE On-chip Debug System
- 18. Self-Programming the Flash
- 18.1 Performing Page Erase by SPM
- 18.2 Filling the Temporary Buffer (Page Loading)
- 18.3 Performing a Page Write
- 18.4 Addressing the Flash During Self-Programming
- 18.5 EEPROM Write Prevents Writing to SPMCSR
- 18.6 Reading Lock, Fuse and Signature Data from Software
- 18.7 Preventing Flash Corruption
- 18.8 Programming Time for Flash when Using SPM
- 18.9 Register Description
- 19. Memory Programming
- 19.1 Program And Data Memory Lock Bits
- 19.2 Fuse Bytes
- 19.3 Device Signature Imprint Table
- 19.4 Page Size
- 19.5 Serial Programming
- 19.6 High-voltage Serial Programming
- 19.7 High-Voltage Serial Programming Algorithm
- 19.7.1 Enter High-voltage Serial Programming Mode
- 19.7.2 Considerations for Efficient Programming
- 19.7.3 Chip Erase
- 19.7.4 Programming the Flash
- 19.7.5 Programming the EEPROM
- 19.7.6 Reading the Flash
- 19.7.7 Reading the EEPROM
- 19.7.8 Programming and Reading the Fuse and Lock Bits
- 19.7.9 Reading the Signature Bytes and Calibration Byte
- 19.7.10 Power-off sequence
- 20. Electrical Characteristics
- 21. Typical Characteristics
- 21.1 Supply Current of I/O Modules
- 21.2 Active Supply Current
- 21.3 Idle Supply Current
- 21.4 Power-down Supply Current
- 21.5 Standby Supply Current
- 21.6 Pin Pull-up
- 21.7 Pin Driver Strength
- 21.8 Pin Threshold and Hysteresis
- 21.9 BOD Threshold and Analog Comparator Offset
- 21.10 Internal Oscillator Speed
- 21.11 Current Consumption of Peripheral Units
- 21.12 Current Consumption in Reset and Reset Pulsewidth
- 22. Register Summary
- 23. Instruction Set Summary
- 24. Ordering Information
- 25. Packaging Information
- 26. Errata
- 27. Datasheet Revision History
- Table of Contents
169
8006K–AVR–10/10
ATtiny24/44/84
19.7.2 Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory
locations.
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
• Address High byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
19.7.3 Chip Erase
The Chip Erase will erase the Flash and EEPROM
(1)
memories plus Lock bits. The Lock bits are
not reset until the Program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are re-
programmed.
1. Load command “Chip Erase” (see Table 19-16 on page 171).
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
Note: 1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
19.7.4 Programming the Flash
The Flash is organized in pages, see “Page Size” on page 162. When programming the Flash,
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
1. Load Command “Write Flash” (see Table 19-16 on page 171).
2. Load Flash Page Buffer.
3. Load Flash High Address and Program Page. Wait after Instr. 3 until SDO goes high for
the “Page Programming” cycle to finish.
4. Repeat 2 through 3 until the entire Flash is programmed or until all data has been
programmed.
5. End Page Programming by Loading Command “No Operation”.
When writing or reading serial data to the ATtiny24/44/84, data is clocked on the rising edge of
the serial clock, see Figure 20-6 on page 184, Figure 19-3 on page 167 and Table 20-13 on
page 184 for details.