Datasheet
Table Of Contents
- Features
- 1. Pin Configurations
- 2. Overview
- 3. About
- 4. CPU Core
- 5. Memories
- 6. Clock System
- 7. Power Management and Sleep Modes
- 8. System Control and Reset
- 9. Interrupts
- 10. I/O Ports
- 11. 8-bit Timer/Counter0 with PWM
- 11.1 Features
- 11.2 Overview
- 11.3 Clock Sources
- 11.4 Counter Unit
- 11.5 Output Compare Unit
- 11.6 Compare Match Output Unit
- 11.7 Modes of Operation
- 11.8 Timer/Counter Timing Diagrams
- 11.9 Register Description
- 11.9.1 TCCR0A – Timer/Counter Control Register A
- 11.9.2 TCCR0B – Timer/Counter Control Register B
- 11.9.3 TCNT0 – Timer/Counter Register
- 11.9.4 OCR0A – Output Compare Register A
- 11.9.5 OCR0B – Output Compare Register B
- 11.9.6 TIMSK0 – Timer/Counter 0 Interrupt Mask Register
- 11.9.7 TIFR0 – Timer/Counter 0 Interrupt Flag Register
- 12. 16-bit Timer/Counter1
- 12.1 Features
- 12.2 Overview
- 12.3 Timer/Counter Clock Sources
- 12.4 Counter Unit
- 12.5 Input Capture Unit
- 12.6 Output Compare Units
- 12.7 Compare Match Output Unit
- 12.8 Modes of Operation
- 12.9 Timer/Counter Timing Diagrams
- 12.10 Accessing 16-bit Registers
- 12.11 Register Description
- 12.11.1 TCCR1A – Timer/Counter1 Control Register A
- 12.11.2 TCCR1B – Timer/Counter1 Control Register B
- 12.11.3 TCCR1C – Timer/Counter1 Control Register C
- 12.11.4 TCNT1H and TCNT1L – Timer/Counter1
- 12.11.5 OCR1AH and OCR1AL – Output Compare Register 1 A
- 12.11.6 OCR1BH and OCR1BL – Output Compare Register 1 B
- 12.11.7 ICR1H and ICR1L – Input Capture Register 1
- 12.11.8 TIMSK1 – Timer/Counter Interrupt Mask Register 1
- 12.11.9 TIFR1 – Timer/Counter Interrupt Flag Register 1
- 13. Timer/Counter Prescaler
- 14. USI – Universal Serial Interface
- 15. Analog Comparator
- 16. Analog to Digital Converter
- 16.1 Features
- 16.2 Overview
- 16.3 Operation
- 16.4 Starting a Conversion
- 16.5 Prescaling and Conversion Timing
- 16.6 Changing Channel or Reference Selection
- 16.7 ADC Noise Canceler
- 16.8 Analog Input Circuitry
- 16.9 Noise Canceling Techniques
- 16.10 ADC Accuracy Definitions
- 16.11 ADC Conversion Result
- 16.12 Temperature Measurement
- 16.13 Register Description
- 17. debugWIRE On-chip Debug System
- 18. Self-Programming the Flash
- 18.1 Performing Page Erase by SPM
- 18.2 Filling the Temporary Buffer (Page Loading)
- 18.3 Performing a Page Write
- 18.4 Addressing the Flash During Self-Programming
- 18.5 EEPROM Write Prevents Writing to SPMCSR
- 18.6 Reading Lock, Fuse and Signature Data from Software
- 18.7 Preventing Flash Corruption
- 18.8 Programming Time for Flash when Using SPM
- 18.9 Register Description
- 19. Memory Programming
- 19.1 Program And Data Memory Lock Bits
- 19.2 Fuse Bytes
- 19.3 Device Signature Imprint Table
- 19.4 Page Size
- 19.5 Serial Programming
- 19.6 High-voltage Serial Programming
- 19.7 High-Voltage Serial Programming Algorithm
- 19.7.1 Enter High-voltage Serial Programming Mode
- 19.7.2 Considerations for Efficient Programming
- 19.7.3 Chip Erase
- 19.7.4 Programming the Flash
- 19.7.5 Programming the EEPROM
- 19.7.6 Reading the Flash
- 19.7.7 Reading the EEPROM
- 19.7.8 Programming and Reading the Fuse and Lock Bits
- 19.7.9 Reading the Signature Bytes and Calibration Byte
- 19.7.10 Power-off sequence
- 20. Electrical Characteristics
- 21. Typical Characteristics
- 21.1 Supply Current of I/O Modules
- 21.2 Active Supply Current
- 21.3 Idle Supply Current
- 21.4 Power-down Supply Current
- 21.5 Standby Supply Current
- 21.6 Pin Pull-up
- 21.7 Pin Driver Strength
- 21.8 Pin Threshold and Hysteresis
- 21.9 BOD Threshold and Analog Comparator Offset
- 21.10 Internal Oscillator Speed
- 21.11 Current Consumption of Peripheral Units
- 21.12 Current Consumption in Reset and Reset Pulsewidth
- 22. Register Summary
- 23. Instruction Set Summary
- 24. Ordering Information
- 25. Packaging Information
- 26. Errata
- 27. Datasheet Revision History
- Table of Contents

165
8006K–AVR–10/10
ATtiny24/44/84
next page (See Table 19-11 on page 165). In a chip erased device, no 0xFF in the data
file(s) need to be programmed.
6. Any memory location can be verified by using the Read instruction which returns the
content at the selected address at serial output MISO.
7. At the end of the programming session, RESET
can be set high to commence normal
operation.
8. Power-off sequence (if needed):
Set RESET
to “1”.
Tur n V
CC
power off.
19.5.2 Serial Programming Instruction set
The instruction set is described in Table 19-12 and Figure 19-2 on page 166.
Table 19-11. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
t
WD_ERASE
9.0 ms
t
WD_FUSE
4.5 ms
Table 19-12. Serial Programming Instruction Set
Instruction/Operation
(1)
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4
Programming Enable $AC $53 $00 $00
Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00
Poll RDY/BSY $F0 $00 $00 data byte out
Load Instructions
Load Extended Address byte $4D $00 Extended adr $00
Load Program Memory Page, High byte $48 adr MSB adr LSB high data byte in
Load Program Memory Page, Low byte $40 adr MSB adr LSB low data byte in
Load EEPROM Memory Page (page access) $C1 $00 adr LSB data byte in
Read Instructions
Read Program Memory, High byte $28 adr MSB adr LSB high data byte out
Read Program Memory, Low byte $20 adr MSB adr LSB low data byte out
Read EEPROM Memory $A0 $00 adr LSB data byte out
Read Lock bits $58 $00 $00 data byte out
Read Signature Byte $30 $00 adr LSB data byte out
Read Fuse bits $50 $00 $00 data byte out
Read Fuse High bits $58 $08 $00 data byte out
Read Extended Fuse Bits $50 $08 $00 data byte out
Read Calibration Byte $38 $00 $00 data byte out