Datasheet
Table Of Contents
- Features
- 1. Pin Configurations
- 2. Overview
- 3. About
- 4. CPU Core
- 5. Memories
- 6. Clock System
- 7. Power Management and Sleep Modes
- 8. System Control and Reset
- 9. Interrupts
- 10. I/O Ports
- 11. 8-bit Timer/Counter0 with PWM
- 11.1 Features
- 11.2 Overview
- 11.3 Clock Sources
- 11.4 Counter Unit
- 11.5 Output Compare Unit
- 11.6 Compare Match Output Unit
- 11.7 Modes of Operation
- 11.8 Timer/Counter Timing Diagrams
- 11.9 Register Description
- 11.9.1 TCCR0A – Timer/Counter Control Register A
- 11.9.2 TCCR0B – Timer/Counter Control Register B
- 11.9.3 TCNT0 – Timer/Counter Register
- 11.9.4 OCR0A – Output Compare Register A
- 11.9.5 OCR0B – Output Compare Register B
- 11.9.6 TIMSK0 – Timer/Counter 0 Interrupt Mask Register
- 11.9.7 TIFR0 – Timer/Counter 0 Interrupt Flag Register
- 12. 16-bit Timer/Counter1
- 12.1 Features
- 12.2 Overview
- 12.3 Timer/Counter Clock Sources
- 12.4 Counter Unit
- 12.5 Input Capture Unit
- 12.6 Output Compare Units
- 12.7 Compare Match Output Unit
- 12.8 Modes of Operation
- 12.9 Timer/Counter Timing Diagrams
- 12.10 Accessing 16-bit Registers
- 12.11 Register Description
- 12.11.1 TCCR1A – Timer/Counter1 Control Register A
- 12.11.2 TCCR1B – Timer/Counter1 Control Register B
- 12.11.3 TCCR1C – Timer/Counter1 Control Register C
- 12.11.4 TCNT1H and TCNT1L – Timer/Counter1
- 12.11.5 OCR1AH and OCR1AL – Output Compare Register 1 A
- 12.11.6 OCR1BH and OCR1BL – Output Compare Register 1 B
- 12.11.7 ICR1H and ICR1L – Input Capture Register 1
- 12.11.8 TIMSK1 – Timer/Counter Interrupt Mask Register 1
- 12.11.9 TIFR1 – Timer/Counter Interrupt Flag Register 1
- 13. Timer/Counter Prescaler
- 14. USI – Universal Serial Interface
- 15. Analog Comparator
- 16. Analog to Digital Converter
- 16.1 Features
- 16.2 Overview
- 16.3 Operation
- 16.4 Starting a Conversion
- 16.5 Prescaling and Conversion Timing
- 16.6 Changing Channel or Reference Selection
- 16.7 ADC Noise Canceler
- 16.8 Analog Input Circuitry
- 16.9 Noise Canceling Techniques
- 16.10 ADC Accuracy Definitions
- 16.11 ADC Conversion Result
- 16.12 Temperature Measurement
- 16.13 Register Description
- 17. debugWIRE On-chip Debug System
- 18. Self-Programming the Flash
- 18.1 Performing Page Erase by SPM
- 18.2 Filling the Temporary Buffer (Page Loading)
- 18.3 Performing a Page Write
- 18.4 Addressing the Flash During Self-Programming
- 18.5 EEPROM Write Prevents Writing to SPMCSR
- 18.6 Reading Lock, Fuse and Signature Data from Software
- 18.7 Preventing Flash Corruption
- 18.8 Programming Time for Flash when Using SPM
- 18.9 Register Description
- 19. Memory Programming
- 19.1 Program And Data Memory Lock Bits
- 19.2 Fuse Bytes
- 19.3 Device Signature Imprint Table
- 19.4 Page Size
- 19.5 Serial Programming
- 19.6 High-voltage Serial Programming
- 19.7 High-Voltage Serial Programming Algorithm
- 19.7.1 Enter High-voltage Serial Programming Mode
- 19.7.2 Considerations for Efficient Programming
- 19.7.3 Chip Erase
- 19.7.4 Programming the Flash
- 19.7.5 Programming the EEPROM
- 19.7.6 Reading the Flash
- 19.7.7 Reading the EEPROM
- 19.7.8 Programming and Reading the Fuse and Lock Bits
- 19.7.9 Reading the Signature Bytes and Calibration Byte
- 19.7.10 Power-off sequence
- 20. Electrical Characteristics
- 21. Typical Characteristics
- 21.1 Supply Current of I/O Modules
- 21.2 Active Supply Current
- 21.3 Idle Supply Current
- 21.4 Power-down Supply Current
- 21.5 Standby Supply Current
- 21.6 Pin Pull-up
- 21.7 Pin Driver Strength
- 21.8 Pin Threshold and Hysteresis
- 21.9 BOD Threshold and Analog Comparator Offset
- 21.10 Internal Oscillator Speed
- 21.11 Current Consumption of Peripheral Units
- 21.12 Current Consumption in Reset and Reset Pulsewidth
- 22. Register Summary
- 23. Instruction Set Summary
- 24. Ordering Information
- 25. Packaging Information
- 26. Errata
- 27. Datasheet Revision History
- Table of Contents

15
8006K–AVR–10/10
ATtiny24/44/84
5. Memories
This section describes the different memories in the ATtiny24/44/84. The AVR architecture has
two main memory spaces, the Data memory and the Program memory space. In addition, the
ATtiny24/44/84 features an EEPROM Memory for data storage. All three memory spaces are lin-
ear and regular.
5.1 In-System Re-programmable Flash Program Memory
The ATtiny24/44/84 contains 2/4/8K byte On-chip In-System Reprogrammable Flash memory
for program storage. Since all AVR instructions are 16 or 32 bits wide, the Flash is organized as
1024/2048/4096 x 16.
The Flash memory has an endurance of at least 10,000 write/erase cycles. The ATtiny24/44/84
Program Counter (PC) is 10/11/12 bits wide, thus addressing the 1024/2048/4096 Program
memory locations. “Memory Programming” on page 159 contains a detailed description on Flash
data serial downloading using the SPI pins.
Constant tables can be allocated within the entire Program memory address space (see instruc-
tions LPM – Load Program Memory and SPM – Store Program Memory).
Timing diagrams for instruction fetch and execution are presented in “Instruction Execution Tim-
ing” on page 12.
Figure 5-1. Program Memory Map
5.2 SRAM Data Memory
Figure 5-2 on page 16 shows how the ATtiny24/44/84 SRAM Memory is organized.
The lower data memory locations address both the Register File, the I/O memory and the inter-
nal data SRAM. The first 32 locations address the Register File, the next 64 locations the
standard I/O memory, and the last 128/256/512 locations address the internal data SRAM.
The five different addressing modes for the Data memory cover: Direct, Indirect with Displace-
ment, Indirect, Indirect with Pre-decrement, and Indirect with Post-increment. In the Register
File, registers R26 to R31 feature the indirect addressing pointer registers.
The direct addressing reaches the entire data space.
The Indirect with Displacement mode reaches 63 address locations from the base address given
by the Y- or Z-register.
0x0000
0x03FF/0x07FF/0xFFF
Program Memory