Datasheet

15
8246A–AVR–11/09
ATtiny2313A/4313
5. Memories
This section describes the different memories in the ATtiny2313A/4313. The AVR architecture
has two main memory spaces, the Data Memory and the Program Memory space. In addition,
the ATtiny2313A/4313 features an EEPROM Memory for data storage. All three memory spaces
are linear and regular.
5.1 In-System Reprogrammable Flash Program Memory
The ATtiny2313A/4313 contains 2/4K bytes On-chip In-System Reprogrammable Flash memory
for program storage. Since all AVR instructions are 16 or 32 bits wide, the Flash is organized as
1/2K x 16.
The Flash memory has an endurance of at least 10,000 write/erase cycles. The
ATtiny2313A/4313 Program Counter (PC) is 10/11 bits wide, thus addressing the 1/2K program
memory locations. “Memory Programming” on page 178 contains a detailed description on Flash
data serial downloading using the SPI pins.
Constant tables can be allocated within the entire program memory address space (see the LPM
– Load Program Memory instruction description).
Timing diagrams for instruction fetch and execution are presented in “Instruction Execution Tim-
ing” on page 11.
Figure 5-1. Program Memory Map
0x0000
0x03FF/0x07FF
Program Memory