Datasheet

174
ATtiny2313/V
2543H–AVR–02/05
Figure 79. Serial Programming Waveforms
Table 77. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
t
WD_ERASE
4.0 ms
t
WD_FUSE
4.5 ms
MSB
MSB
LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI)
(MISO)
SAMPLE
SERIAL DATA OUTPUT
Table 78. Serial Programming Instruction Set
Instruction
Instruction Format
OperationByte 1 Byte 2 Byte 3 Byte4
Programming Enable 1010 1100 0101 0011 xxxx xxxx xxxx xxxx Enable Serial Programming after
RESET
goes low.
Chip Erase 1010 1100 100x xxxx xxxx xxxx xxxx xxxx Chip Erase EEPROM and Flash.
Read Program Memory 0010 H000 0000 00aa bbbb bbbb oooo oooo Read H (high or low) data o from
Program memory at word address a:b.
Load Program Memory Page 0100 H000 000x xxxx xxxx bbbb iiii iiii Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page 0100 1100 0000 00aa bbbb xxxx xxxx xxxx Write Program Memory Page at
address a:b.
Read EEPROM Memory 1010 0000 000x xxxx xbbb bbbb oooo oooo Read data o from EEPROM memory at
address b.
Write EEPROM Memory 1100 0000 000x xxxx xbbb bbbb iiii iiii Write data i to EEPROM memory at
address b.
Load EEPROM Memory
Page (page access)
1100 0001 0000 0000 0000 00bb iiii iiii Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM Memory
Page (page access)
1100 0010 00xx xxxx xbbb bb00 xxxx xxxx
Write EEPROM page at address b.