Datasheet

240
7728G–AVR–06/10
ATtiny87/ATtiny167
7. At the end of the programming session, RESET can be set high to commence normal
operation.
8. Power-off sequence (if needed):
Set RESET
to “1”.
Tur n Vcc power off.
21.8.2 Serial Programming Instruction set
Table 21-15 on page 240 and Figure 21-8 on page 242 describes the Instruction set
Table 21-14. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
t
WD_ERASE
4.0 ms
t
WD_FUSE
4.5 ms
Table 21-15. Serial Programming Instruction Set
Instruction/Operation
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4
Programming Enable 0xAC 0x53 0x00 0x00
Chip Erase (Program Memory/EEPROM) 0xAC 0x80 0x00 0x00
Poll RDY/BSY
0xF0 0x00 0x00 data byte out
Load Instructions
Load Extended Address byte
(1)
0x4D 0x00 Extended add. 0x00
Load Program Memory Page, High byte 0x48 add. MSB add. LSB high data byte in
Load Program Memory Page, Low byte 0x40 add. MSB add. LSB low data byte in
Load EEPROM Memory Page (page access) 0xC1 0x00 0000 000aa
b
data byte in
Read Instructions
Read Program Memory, High byte 0x28 add. MSB add. LSB high data byte out
Read Program Memory, Low byte 0x20 add. MSB add. LSB low data byte out
Read EEPROM Memory 0xA0 0x00 00aa aaaa data byte out
Read Lock bits 0x58 0x00 0x00 data byte out
Read Signature Byte 0x30 0x00 0000 000aa data byte out
Read Fuse bits 0x50 0x00 0x00 data byte out
Read Fuse High bits 0x58 0x08 0x00 data byte out
Read Extended Fuse Bits 0x50 0x08 0x00 data byte out
Read Calibration Byte 0x38 0x00 0x00 data byte out
Write Instructions
(6)
Write Program Memory Page 0x4C add. MSB add. LSB 0x00