Datasheet

115
ATtiny13
2535E–AVR–10/04
Programming the EEPROM The EEPROM is organized in pages, see Table 51 on page 110. When programming
the EEPROM, the data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM Data mem-
ory is as follows (refer to Table 55):
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page
Programming” cycle to finish.
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has
been programmed.
5. End Page Programming by Loading Command “No Operation”.
Reading the Flash The algorithm for reading the Flash memory is as follows (refer to Table 55):
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are avail-
able at serial output SDO.
Reading the EEPROM The algorithm for reading the EEPROM memory is as follows (refer to Table 55):
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at
serial output SDO.
Programming and Reading
the Fuse and Lock Bits
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are
shown in Table 55.
Reading the Signature Bytes
and Calibration Byte
The algorithms for reading the Signature bytes and Calibration byte are shown in Table
55.
Power-off sequence Set SCI to “0”. Set RESET to “1”. Turn V
CC
power off.