Datasheet

1103
SAM4S Series [DATASHEET]
11100F–ATARM–29-Jan-14
Note: 1. PA[4–11], PA[15–25], PB[0–9], PB[12–14], PC[0–31]
2. At power-up VDDIO needs to reach 0.6V before VDDIN reaches 1.0V
3. VDDIO voltage needs to be equal or below to (VDDIN voltage +0.5V)
4. The Flash programming characteristics are applicable at operating temperature range: T
A
= -40°C to 85°C.
I
IH
Input High
Pull-down OFF -1 — 1
µA
Pull-down ON 10 — 50
R
PULLUP
Pull-up Resistor
PA0–PA31, PB0–PB14, PC0–PC31
NRST
70 100 130 kΩ
R
PULLDO
WN
Pull-down Resistor
PA0–PA31, PB0–PB14, PC0–PC31
NRST
70 100 130 kΩ
R
ODT
On-die Series
Termination Resistor
PA4–PA31, PB0–PB9, PB12–PB14, PC0–PC31
PA0–PA3
—
36
18
Ω
I
CC
Flash Active Current on
VDDCORE
Random 144-bit Read @ 25°C :
Maximum read frequency at VDDCORE = 1.2V,
VDDIO =3.3V
—1625
mA
Random 72-bit Read @ 25°C:
Maximum read frequency at VDDCORE = 1.2V,
VDDIO =3.3V
—1018
Program
(4)
onto VDDCORE = 1.2V, VDDIO =
3.3V @ 25°C
—35
I
CC33
Flash Active Current on
VDDIO
Random 144-bit read:
Maximum read frequency at VDDCORE = 1.2V,
VDDIO =3.3V @ 25°C
—316
mA
Random 72-bit read:
Maximum read frequency at VDDCORE = 1.2V,
VDDIO =3.3V @ 25°C
—35
Program
(4)
onto VDDCORE = 1.2V, VDDIO =
3.3V @ 25°C
—1015
Table 44-3. DC Characteristics (Continued)
Symbol Parameter Conditions Min Typ Max Units