Datasheet

1161
SAM4S Series [DATASHEET]
11100F–ATARM–29-Jan-14
44.12.9 Embedded Flash Characteristics
The maximum operating frequency given in Table 44-70 is limited by the embedded Flash access time when the processor is
fetching code out of it. Table 44-70 gives the device maximum operating frequency depending on the field FWS of the MC_FMR
register. This field defines the number of wait states required to access the embedded Flash memory.
The embedded Flash is fully tested during production test. The Flash contents are not set to a known state prior to shipment.
Therefore, the Flash contents should be erased prior to programming an application.
Notes: 1. Only the read operation is characterized between -40
°C and +105°C.
Other operations are characterized between -40
°C and +85°C.
2. All bits in the word(s) are set to 0.
Table 44-70. Embedded Flash Wait State SAM4S2/S4/S16/S8/SD32/SD16/SA16
FWS Read Operations
Maximum Operating Frequency (MHz)
@105°C
VDDCORE Set at
1.08V and VDDIO
1.62V to 3.6V
VDDCORE Set at
1.08V and VDDIO
2.7V to 3.6V
VDDCORE Set at
1.2V and VDDIO
1.62V to 3.6V
VDDCORE Set at
1.2V and VDDIO
2.7V to 3.6V
01 cycle16201721
1 2 cycles 33 40 34 42
2 3 cycles 50 60 52 63
3 4 cycles 67 80 69 84
4 5 cycles 84 100 87 105
5 6 cycles 100 — 104 120
Table 44-71. AC Flash Characteristics
(1)
Parameter Conditions Min Typ Max Units
Program Cycle Time
Erase Page Mode — 10 50 ms
Erase Block Mode (by 4 Kbytes) — 50 200 ms
Erase Sector Mode — 400 950 ms
Full Chip Erase
1 Mbyte
512 Kbytes
256 Kbytes
128 Kbytes
—
9
5.5
3
2
18
11
6
4
s
Data Retention Not powered or powered — 20 — years
Page Program Time
(2)
1 word changed in the page — — 75 µs
2 words changed in the page — — 120 µs
4 words changed in the page — — 210 µs
16 words changed in the page — — 740 µs
32 words changed in the page — — 1.45 ms
Full page — — 3 ms
Endurance
Write/Erase cycles per page, block or
sector @ 85°C 10k
— — cycles