Datasheet

1126
SAM4S Series [DATASHEET]
11100F–ATARM–29-Jan-14
44.5.6 3 to 20 MHz Crystal Characteristics
44.5.7 3 to 20 MHz XIN Clock Input Characteristics in Bypass Mode
Note: 1. These characteristics apply only when the 3–20 MHz crystal oscillator is in bypass mode.
Table 44-29. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor (Rs)
Fundamental @ 3 MHz
Fundamental @ 8 MHz
Fundamental @ 12 MHz
Fundamental @ 16 MHz
Fundamental @ 20 MHz
——
200
100
80
80
50
Ω
C
M
Motional Capacitance — — 8 fF
C
SHUNT
Shunt Capacitance — — 7 pF
Table 44-30. XIN Clock Electrical Characteristics (In Bypass Mode)
Symbol Parameter Conditions Min Typ Max Units
1/(t
CPXIN
) XIN Clock Frequency
(1)
——50MHz
t
CPXIN
XIN Clock Period
(1)
20 — — ns
t
CHXIN
XIN Clock High Half-period
(1)
8——ns
t
CLXIN
XIN Clock Low Half-period
(1)
8——ns
t
CLCH
Rise Time
(1)
2.2 — — ns
t
CHCL
Fall Time
(1)
2.2 — — ns
V
XIN_IL
V
XIN
Input Low-level Voltage
(1)
-0.3 —
[0.8V:0.3
x V
VDDIO]
V
V
XIN_IH
V
XIN
Input High-level Voltage
(1)
[2.0V:0.7
x V
VDDIO ]
—
V
VDDIO
+0.3V
V
C
PARASTANDBY
Internal Parasitic During Standby
(1)
—5.56.3pF
R
PARASTANDBY
Internal Impedance During Standby
(1)
— 300 — Ω
t
CPXIN
t
CPXIN
t
CPXIN
t
CHXIN
t
CLCH
t
CHCL
V
XIN_IL
V
XIN_IH