Datasheet

1151
SAM4S Series [DATASHEET]
Atmel-11100G-ATARM-SAM4S-Datasheet_27-May-14
44.7.2 Electrical Parameters
44.7.3 Switching Characteristics
Table 44-34. Electrical Parameters
Symbol Parameter Conditions Min Typ Max Unit
Input Levels
V
IL
Low Level — — 0.8 V
V
IH
High Level 2.0 — — V
V
DI
Differential Input Sensitivity |(D+) - (D-)| 0.2 — — V
V
CM
Differential Input Common Mode
Range
0.8 — 2.5 V
C
IN
Transceiver Capacitance Capacitance to ground on each line — 9.18 pF
I Hi-Z State Data Line Leakage 0V < V
IN
< 3.3V -10 — +10 µA
R
EXT
Recommended External USB
Series Resistor
In series with each USB pin with ± 5 % — 27 —
Ω
Output Levels
V
OL
Low Level Output
Measured with R
L
of 1.425 kΩ tied to
3.6V
0.0 — 0.3 V
V
OH
High Level Output
Measured with R
L
of 14.25 kΩ tied to
GND
2.8 — 3.6 V
V
CRS
Output Signal Crossover Voltage
Measurement conditions described in
Figure 44-13 “USB Data Signal Rise
and Fall Times”
1.3 — 2.0 V
Consumption
I
VDDIO
Current Consumption
Transceiver enabled in input mode
DDP = 1 and DDM = 0
— 105 200 µA
I
VDDCORE
Current Consumption — 80 150 µA
Pull-up Resistor
R
PUI
Bus Pull-up Resistor on
Upstream Port (idle bus)
0.900 — 1.575 k
Ω
R
PUA
Bus Pull-up Resistor on
Upstream Port (upstream port
receiving)
1.425 — 3.090 k
Ω
Table 44-35. In Full Speed
Symbol Parameter Conditions Min Typ Max Unit
t
FR
Transition Rise Time C
LOAD
= 50 pF 4 — 20 ns
t
FE
Transition Fall Time C
LOAD
= 50 pF 4 — 20 ns
t
FRFM
Rise/Fall Time Matching 90 — 111.11 %