Datasheet

1060
SAM4S [DATASHEET]
11100E–ATARM–24-Jul-13
43.4.6 3 to 20 MHz Crystal Characteristics
43.4.7 3 to 20 MHz XIN Clock Input Characteristics in Bypass Mode
Note: 1. These characteristics apply only when the 3–20 MHz XTAL Oscillator is in bypass mode.
Table 43-24. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor (Rs)
Fundamental @ 3 MHz
Fundamental @ 8 MHz
Fundamental @ 12 MHz
Fundamental @ 16 MHz
Fundamental @ 20 MHz
——
200
100
80
80
50
Ω
C
M
Motional Capacitance — — 8 fF
C
SHUNT
Shunt Capacitance — — 7 pF
Table 43-25. XIN Clock Electrical Characteristics (In Bypass Mode)
Symbol Parameter Conditions Min Typ Max Units
1/(t
CPXIN
) XIN Clock Frequency
(1)
— — 50 MHz
t
CPXIN
XIN Clock Period
(1)
20 — — ns
t
CHXIN
XIN Clock High Half-period
(1)
8——ns
t
CLXIN
XIN Clock Low Half-period
(1)
8——ns
t
CLCH
Rise Time
(1)
2.2 — — ns
t
CHCL
Fall Time
(1)
2.2 — — ns
V
XIN_IL
V
XIN
Input Low-level Voltage
(1)
-0.3 —
[0.8V:0.3
x V
VDDIO]
V
V
XIN_IH
V
XIN
Input High-level Voltage
(1)
[2.0V:0.7
x V
VDDIO ]
—
V
VDDIO
+0.3V
V
t
CPXIN
t
CPXIN
t
CPXIN
t
CHXIN
t
CLCH
t
CHCL
V
XIN_IL
V
XIN_IH