Datasheet

SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
422
Figure 22-5. Parallel Programming Timing, Read Sequence
22.3.5 Device Operations
Several commands on the Flash memory are available. These commands are summarized in Table 22-3 on
page 419. Each command is driven by the programmer through the parallel interface running several read/write
handshaking sequences.
When a new command is executed, the previous one is automatically achieved. Thus, chaining a read command
after a write automatically flushes the load buffer in the Flash.
NCMD
RDY
NOE
NVALID
DATA[15:0]
MODE[3:0]
1
2
3
4
5
6
7
9
8
ADDR
Adress IN Z
Data OUT
10
11
XIN
12
13
Table 22-5. Read Handshake
Step Programmer Action Device Action DATA I/O
1 Sets MODE and DATA signals Waits for NCMD low Input
2 Clears NCMD signal Latch MODE and DATA Input
3 Waits for RDY low Clears RDY signal Input
4 Sets DATA signal in tristate Waits for NOE Low Input
5 Clears NOE signal Tristate
6 Waits for NVALID low
Sets DATA bus in output mode and outputs
the flash contents.
Output
7 Clears NVALID signal Output
8 Reads value on DATA Bus Waits for NOE high Output
9 Sets NOE signal Output
10 Waits for NVALID high Sets DATA bus in input mode X
11 Sets DATA in output mode Sets NVALID signal Input
12 Sets NCMD signal Waits for NCMD high Input
13 Waits for RDY high Sets RDY signal Input