Datasheet

SAM4E [DATASHEET]
Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14
1432
47.4.4 32.768 kHz Crystal Characteristics
47.4.5 3 to 20 MHz Crystal Oscillator Characteristics
Notes: 1. R
S
is the series resistor
2. R
S
= 100-200 Ω; Cs = 2.0 - 2.5 pF; C
M
= 2 – 1.5 fF (typ, worst case) using 1 kΩ serial resistor on XOUT.
3. R
S
= 50-100 Ω; Cs = 2.0 - 2.5 pF; C
M
= 4 - 3 fF (typ, worst case).
4. R
S
= 25-50 Ω; Cs = 2.5 - 3.0 pF; C
M
= 7 - 5 fF (typ, worst case).
5. R
S
= 20-50 Ω; Cs = 3.2 - 4.0 pF; C
M
= 10 - 8 fF (typ, worst case).
Table 47-19. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor (R
S
) Crystal @ 32.768 kHz — 50 100 kΩ
C
M
Motional capacitance Crystal @ 32.768 kHz 0.6 — 3 fF
C
SHUNT
Shunt capacitance Crystal @ 32.768 kHz 0.6 — 2 pF
Table 47-20. 3 to 20 MHz Crystal Oscillator Characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
REQ
Operating Frequency Normal mode with crystal 3 16 20 MHz
— Supply Ripple Voltage (on VDDPLL) RMS value, 10 kHz to 10 MHz — — 30 mV
— Duty Cycle — 40 50 60 %
t
ON
Startup Time
3 MHz, C
SHUNT
= 3 pF
8 MHz, C
SHUNT
= 7 pF
16 MHz, C
SHUNT
= 7 pF with C
M
= 8 fF
16 MHz, C
SHUNT
= 7 pF with C
M
= 1.6 fF
20 MHz, C
SHUNT
= 7 pF
—
—
—
—
—
—
—
—
—
—
14.5
4
1.4
2.5
1
ms
I
DD_ON
Current consumption
(on VDDIO)
3 MHz
(2)
8 MHz
(3)
16 MHz
(4)
20 MHz
(5)
—
—
—
—
230
300
390
450
350
400
470
560
µA
P
ON
Drive level
3 MHz
8 MHz
16 MHz, 20 MHz
—
—
—
—
—
—
15
30
50
µW
R
F
Internal resistance Between XIN and XOUT — 0.5 — MΩ
C
LEXT
Maximum external capacitance
on XIN and XOUT
—12.5—17.5pF
C
L
Internal Equivalent Load Capacitance
Integrated Load Capacitance
(XIN and XOUT in series)
7.5 9.5 10.5 pF