Datasheet

715
11011B–ATARM–21-Feb-12
SAM3N
35.4.7 3 to 20 MHz Crystal Characteristics
35.4.8 3 to 20 MHz XIN Clock Input Characteristics in Bypass Mode
Note: 1. These characteristics apply only when the 3-20 MHz XTAL Oscillator is in bypass mode.
Table 35-25. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor (Rs)
Fundamental @ 3MHz
Fundamental @ 8MHz
Fundamental @ 12MHz
Fundamental @ 16MHz
Fundamental @ 20MHz
200
100
80
80
50
Ω
C
M
Motional capacitance 8fF
C
SHUNT
Shunt capacitance 7pF
Table 35-26. XIN Clock Electrical Characteristics (In Bypass Mode)
Symbol Parameter Conditions Min Typ Max Units
1/(t
CPXIN
) XIN Clock Frequency
(1)
50 MHz
t
CPXIN
XIN Clock Period
(1)
20 ns
t
CHXIN
XIN Clock High Half-period
(1)
8ns
t
CLXIN
XIN Clock Low Half-period
(1)
8ns
V
XIN_IL
V
XIN
Input Low-level Voltage
(1)
-0.3
0.3 x
V
VDDIO
V
V
XIN_IH
V
XIN
Input High-level Voltage
(1)
0.7 x
V
VDDIO
V
VDDIO
+
0.3
V
t
CPXIN
t
CPXIN
t
CPXIN
t
CHXIN
V
XIN_IL
V
XIN_IH