Datasheet

299
11011B–ATARM–21-Feb-12
SAM3N
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
19.2.5.3 Flash Full Erase Command
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
19.2.5.4 Flash Lock Commands
Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set
Lock command (SLB). With this command, several lock bits can be activated. A Bit Mask is pro-
vided as argument to the command. When bit 0 of the bit mask is set, then the first lock bit is
activated.
5 Write handshaking ADDR3 Memory Address
6 Write handshaking DATA *Memory Address++
7 Write handshaking DATA *Memory Address++
... ... ... ...
n Write handshaking ADDR0 Memory Address LSB
n+1 Write handshaking ADDR1 Memory Address
n+2 Write handshaking ADDR2 Memory Address
n+3 Write handshaking ADDR3 Memory Address
n+4 Write handshaking DATA *Memory Address++
n+5 Write handshaking DATA *Memory Address++
... ... ... ...
Table 19-9. Write Command (Continued)
Step Handshake Sequence MODE[3:0] DATA[7:0]
Table 19-10. Full Erase Command
Step Handshake Sequence MODE[3:0] DATA[15:0] or DATA[7:0]
1 Write handshaking CMDE EA
2 Write handshaking DATA 0