Datasheet

298
11011B–ATARM–21-Feb-12
SAM3N
19.2.5.2 Flash Write Command
This command is used to write the Flash contents.
The Flash memory plane is organized into several pages. Data to be written are stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
before access to any page other than the current one
when a new command is validated (MODE = CMDE)
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
n+1 Write handshaking ADDR1 Memory Address
n+2 Write handshaking ADDR2 Memory Address
n+3 Write handshaking ADDR3 Memory Address
n+4 Read handshaking DATA *Memory Address++
n+5 Read handshaking DATA *Memory Address++
... ... ... ...
Table 19-7. Read Command (Continued)
Step Handshake Sequence MODE[3:0] DATA[7:0]
Table 19-8. Write Command
Step Handshake Sequence MODE[3:0] DATA[15:0]
1 Write handshaking CMDE WP or WPL or EWP or EWPL
2 Write handshaking ADDR0 Memory Address LSB
3 Write handshaking ADDR1 Memory Address
4 Write handshaking DATA *Memory Address++
5 Write handshaking DATA *Memory Address++
... ... ... ...
n Write handshaking ADDR0 Memory Address LSB
n+1 Write handshaking ADDR1 Memory Address
n+2 Write handshaking DATA *Memory Address++
n+3 Write handshaking DATA *Memory Address++
... ... ... ...
Table 19-9. Write Command
Step Handshake Sequence MODE[3:0] DATA[7:0]
1 Write handshaking CMDE WP or WPL or EWP or EWPL
2 Write handshaking ADDR0 Memory Address LSB
3 Write handshaking ADDR1 Memory Address
4 Write handshaking ADDR2 Memory Address