Datasheet

297
11011B–ATARM–21-Feb-12
SAM3N
19.2.5 Device Operations
Several commands on the Flash memory are available. These commands are summarized in
Table 19-3 on page 293. Each command is driven by the programmer through the parallel inter-
face running several read/write handshaking sequences.
When a new command is executed, the previous one is automatically achieved. Thus, chaining
a read command after a write automatically flushes the load buffer in the Flash.
In the following tables, Table 19-6 through Table 19-17
• DATA[15:0] pertains to ASAM3NxB/C (64/100 pins)
• DATA[7:0] pertains to SAM3BxA (48 pins)
19.2.5.1 Flash Read Command
This command is used to read the contents of the Flash memory. The read command can start
at any valid address in the memory plane and is optimized for consecutive reads. Read hand-
shaking can be chained; an internal address buffer is automatically increased.
Table 19-6. Read Command
Step Handshake Sequence MODE[3:0] DATA[15:0]
1 Write handshaking CMDE READ
2 Write handshaking ADDR0 Memory Address LSB
3 Write handshaking ADDR1 Memory Address
4 Read handshaking DATA *Memory Address++
5 Read handshaking DATA *Memory Address++
... ... ... ...
n Write handshaking ADDR0 Memory Address LSB
n+1 Write handshaking ADDR1 Memory Address
n+2 Read handshaking DATA *Memory Address++
n+3 Read handshaking DATA *Memory Address++
... ... ... ...
Table 19-7. Read Command
Step Handshake Sequence MODE[3:0] DATA[7:0]
1 Write handshaking CMDE READ
2 Write handshaking ADDR0 Memory Address LSB
3 Write handshaking ADDR1 Memory Address
4 Write handshaking ADDR2 Memory Address
5 Write handshaking ADDR3 Memory Address
6 Read handshaking DATA *Memory Address++
7 Read handshaking DATA *Memory Address++
... ... ... ...
n Write handshaking ADDR0 Memory Address LSB