Datasheet

185
ATmega8515(L)
2512G–AVR–03/05
Figure 77. Programming the Flash Waveforms
Note: “XX” is don’t care. The letters refer to the programming description above.
Programming the EEPROM The EEPROM is organized in pages, see Table 90 on page 181. When programming
the EEPROM, the program data is latched into a page buffer. This allows one page of
data to be programmed simultaneously. The programming algorithm for the EEPROM
Data memory is as follows (refer to “Programming the Flash” on page 183 for details on
Command, Address and Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte ($00 - $FF).
3. B: Load Address Low Byte ($00 - $FF).
4. C: Load Data ($00 - $FF).
5. E: Latch data (give PAGEL a positive pulse).
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page.
1. Set BS1 to “0”.
2. Give WR
a negative pulse. This starts programming of the EEPROM page.
RDY/BSY
goes low.
3. Wait until to RDY/BSY
goes high before programming the next page.
(See Figure 78 for signal waveforms.)
RDY/BSY
WR
OE
R
ESET +12V
PAGEL
BS2
$10 ADDR. LOW
ADDR. HIGH
DATA
DATA LOW DATA HIGH ADDR. LOW DATA LOW DATA HIGH
XA1
XA0
BS1
XTAL1
XX XX
XX
ABCDEBCDEGH
F