Datasheet
Table Of Contents
- Features
- 1. Pin Configurations
- 2. Overview
- 3. Resources
- 4. Data Retention
- 5. About Code Examples
- 6. Capacitive touch sensing
- 7. AVR CPU Core
- 8. AVR Memories
- 9. System Clock and Clock Options
- 10. Power Management and Sleep Modes
- 11. System Control and Reset
- 12. Interrupts
- 13. External Interrupts
- 13.1 Pin Change Interrupt Timing
- 13.2 Register Description
- 13.2.1 EICRA – External Interrupt Control Register A
- 13.2.2 EIMSK – External Interrupt Mask Register
- 13.2.3 EIFR – External Interrupt Flag Registe
- 13.2.4 PCMSK3 – Pin Change Mask Register 3(1)
- 13.2.5 PCMSK2 – Pin Change Mask Register 2(1)
- 13.2.6 PCMSK1 – Pin Change Mask Register 1
- 13.2.7 PCMSK0 – Pin Change Mask Register 0
- 14. I/O-Ports
- 14.1 Overview
- 14.2 Ports as General Digital I/O
- 14.3 Alternate Port Functions
- 14.4 Register Description
- 14.4.1 MCUCR – MCU Control Register
- 14.4.2 PORTA – Port A Data Register
- 14.4.3 DDRA – Port A Data Direction Register
- 14.4.4 PINA – Port A Input Pins Address
- 14.4.5 PORTB – Port B Data Register
- 14.4.6 DDRB – Port B Data Direction Register
- 14.4.7 PINB – Port B Input Pins Address
- 14.4.8 PORTC – Port C Data Register
- 14.4.9 DDRC – Port C Data Direction Register
- 14.4.10 PINC – Port C Input Pins Address
- 14.4.11 PORTD – Port D Data Register
- 14.4.12 DDRD – Port D Data Direction Register
- 14.4.13 PIND – Port D Input Pins Address
- 14.4.14 PORTE – Port E Data Register
- 14.4.15 DDRE – Port E Data Direction Register
- 14.4.16 PINE – Port E Input Pins Address
- 14.4.17 PORTF – Port F Data Register
- 14.4.18 DDRF – Port F Data Direction Register
- 14.4.19 PINF – Port F Input Pins Address
- 14.4.20 PORTG – Port G Data Register
- 14.4.21 DDRG – Port G Data Direction Register
- 14.4.22 PING – Port G Input Pins Address
- 14.4.23 PORTH – Port H Data Register(1)
- 14.4.24 DDRH – Port H Data Direction Register(1)
- 14.4.25 PINH – Port H Input Pins Address(1)
- 14.4.26 PORTJ – Port J Data Register(1)
- 14.4.27 DDRJ – Port J Data Direction Register(1)
- 14.4.28 PINJ – Port J Input Pins Address(1)
- 15. 8-bit Timer/Counter0 with PWM
- 16. Timer/Counter0 and Timer/Counter1 Prescalers
- 17. 16-bit Timer/Counter1
- 17.1 Features
- 17.2 Overview
- 17.3 Accessing 16-bit Registers
- 17.4 Timer/Counter Clock Sources
- 17.5 Counter Unit
- 17.6 Input Capture Unit
- 17.7 Output Compare Units
- 17.8 Compare Match Output Unit
- 17.9 Modes of Operation
- 17.10 Timer/Counter Timing Diagrams
- 17.11 Register Description
- 17.11.1 TCCR1A – Timer/Counter1 Control Register A
- 17.11.2 TCCR1B – Timer/Counter1 Control Register B
- 17.11.3 TCCR1C – Timer/Counter1 Control Register C
- 17.11.4 TCNT1H and TCNT1L – Timer/Counter1
- 17.11.5 OCR1AH and OCR1AL – Output Compare Register 1 A
- 17.11.6 OCR1BH and OCR1BL – Output Compare Register 1 B
- 17.11.7 ICR1H and ICR1L – Input Capture Register 1
- 17.11.8 TIMSK1 – Timer/Counter1 Interrupt Mask Register
- 17.11.9 TIFR1 – Timer/Counter1 Interrupt Flag Register
- 18. 8-bit Timer/Counter2 with PWM and Asynchronous Operation
- 18.1 Features
- 18.2 Overview
- 18.3 Timer/Counter Clock Sources
- 18.4 Counter Unit
- 18.5 Output Compare Unit
- 18.6 Compare Match Output Unit
- 18.7 Modes of Operation
- 18.8 Timer/Counter Timing Diagrams
- 18.9 Asynchronous Operation of Timer/Counter2
- 18.10 Timer/Counter Prescaler
- 18.11 Register Description
- 18.11.1 TCCR2A – Timer/Counter Control Register A
- 18.11.2 TCNT2 – Timer/Counter Register
- 18.11.3 OCR2A – Output Compare Register A
- 18.11.4 ASSR – Asynchronous Status Register
- 18.11.5 TIMSK2 – Timer/Counter2 Interrupt Mask Register
- 18.11.6 TIFR2 – Timer/Counter2 Interrupt Flag Register
- 18.11.7 GTCCR – General Timer/Counter Control Register
- 19. SPI – Serial Peripheral Interface
- 20. USART0
- 20.1 Features
- 20.2 Overview
- 20.3 Clock Generation
- 20.4 Frame Formats
- 20.5 USART Initialization
- 20.6 Data Transmission – The USART Transmitter
- 20.7 Data Reception – The USART Receiver
- 20.8 Asynchronous Data Reception
- 20.9 Multi-processor Communication Mode
- 20.10 Examples of Baud Rate Setting
- 20.11 Register Description
- 21. USI – Universal Serial Interface
- 22. Analog Comparator
- 23. Analog to Digital Converter
- 24. JTAG Interface and On-chip Debug System
- 25. IEEE 1149.1 (JTAG) Boundary-scan
- 26. Boot Loader Support – Read-While-Write Self-Programming
- 26.1 Features
- 26.2 Overview
- 26.3 Application and Boot Loader Flash Sections
- 26.4 Read-While-Write and No Read-While-Write Flash Sections
- 26.5 Boot Loader Lock Bits
- 26.6 Entering the Boot Loader Program
- 26.7 Addressing the Flash During Self-Programming
- 26.8 Self-Programming the Flash
- 26.8.1 Performing Page Erase by SPM
- 26.8.2 Filling the Temporary Buffer (Page Loading)
- 26.8.3 Performing a Page Write
- 26.8.4 Using the SPM Interrupt
- 26.8.5 Consideration While Updating BLS
- 26.8.6 Prevent Reading the RWW Section During Self-Programming
- 26.8.7 Setting the Boot Loader Lock Bits by SPM
- 26.8.8 EEPROM Write Prevents Writing to SPMCSR
- 26.8.9 Reading the Fuse and Lock Bits from Software
- 26.8.10 Preventing Flash Corruption
- 26.8.11 Programming Time for Flash when Using SPM
- 26.8.12 Simple Assembly Code Example for a Boot Loader
- 26.8.13 Atmel ATmega325/3250/645/6450 Boot Loader Parameters
- 26.9 Register Description
- 27. Memory Programming
- 27.1 Program And Data Memory Lock Bits
- 27.2 Fuse Bits
- 27.3 Signature Bytes
- 27.4 Calibration Byte
- 27.5 Parallel Programming Parameters, Pin Mapping, and Commands
- 27.6 Parallel Programming
- 27.6.1 Enter Programming Mode
- 27.6.2 Considerations for Efficient Programming
- 27.6.3 Chip Erase
- 27.6.4 Programming the Flash
- 27.6.5 Programming the EEPROM
- 27.6.6 Reading the Flash
- 27.6.7 Reading the EEPROM
- 27.6.8 Programming the Fuse Low Bits
- 27.6.9 Programming the Fuse High Bits
- 27.6.10 Programming the Extended Fuse Bits
- 27.6.11 Programming the Lock Bits
- 27.6.12 Reading the Fuse and Lock Bits
- 27.6.13 Reading the Signature Bytes
- 27.6.14 Reading the Calibration Byte
- 27.6.15 Parallel Programming Characteristics
- 27.7 Serial Downloading
- 27.8 Programming via the JTAG Interface
- 27.8.1 Programming Specific JTAG Instructions
- 27.8.2 AVR_RESET (0xC)
- 27.8.3 PROG_ENABLE (0x4)
- 27.8.4 PROG_COMMANDS (0x5)
- 27.8.5 PROG_PAGELOAD (0x6)
- 27.8.6 PROG_PAGEREAD (0x7)
- 27.8.7 Data Registers
- 27.8.8 Reset Register
- 27.8.9 Programming Enable Register
- 27.8.10 Programming Command Register
- 27.8.11 Flash Data Byte Register
- 27.8.12 Programming Algorithm
- 27.8.13 Entering Programming Mode
- 27.8.14 Leaving Programming Mode
- 27.8.15 Performing Chip Erase
- 27.8.16 Programming the Flash
- 27.8.17 Reading the Flash
- 27.8.18 Programming the EEPROM
- 27.8.19 Reading the EEPROM
- 27.8.20 Programming the Fuses
- 27.8.21 Programming the Lock Bits
- 27.8.22 Reading the Fuses and Lock Bits
- 27.8.23 Reading the Signature Bytes
- 27.8.24 Reading the Calibration Byte
- 28. Electrical Characteristics
- 29. Typical Characteristics
- 29.1 Active Supply Current
- 29.2 Idle Supply Current
- 29.3 Supply Current of I/O modules
- 29.4 Power-down Supply Current
- 29.5 Power-save Supply Current
- 29.6 Standby Supply Current
- 29.7 Pin Pull-up
- 29.8 Pin Driver Strength
- 29.9 Pin Thresholds and hysteresis
- 29.10 BOD Thresholds and Analog Comparator Offset
- 29.11 Internal Oscillator Speed
- 29.12 Current Consumption of Peripheral Units
- 29.13 Current Consumption in Reset and Reset Pulsewidth
- 30. Register Summary
- 31. Instruction Set Summary
- 32. Ordering Information
- 33. Packaging Information
- 34. Errata
- 35. Datasheet Revision History
- 35.1 Rev. 2570N – 05/11
- 35.2 Rev. 2570M – 04/11
- 35.3 Rev. 2570L – 08/07
- 35.4 Rev. 2570K – 04/07
- 35.5 Rev. 2570J – 11/06
- 35.6 Rev. 2570I – 07/06
- 35.7 Rev. 2570H – 06/06
- 35.8 Rev. 2570G – 04/06
- 35.9 Rev. 2570F – 03/06
- 35.10 Rev. 2570E – 03/06
- 35.11 Rev. 2570D – 05/05
- 35.12 Rev. 2570C – 11/04
- 35.13 Rev. 2570B – 09/04
- 35.14 Rev. 2570A – 09/04
- Table of Contents
271
2570N–AVR–05/11
ATmega325/3250/645/6450
27.6 Parallel Programming
27.6.1 Enter Programming Mode
The following algorithm puts the device in Parallel (High-voltage) Programming mode:
1. Set Prog_enable pins listed in Table 27-7 on page 269 to “0000”, RESET pin and V
CC
to
0V.
2. Apply 4.5 - 5.5V between V
CC
and GND.
3. Ensure that V
CC
reaches at least 1.8V within the next 20 µs.
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
applied to ensure the Prog_enable Signature has been latched.
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
CC
is unable to fulfill the requirements listed above, the following alterna-
tive algorithm can be used.
1. Set Prog_enable pins listed in Table 27-7 on page 269 to “0000”, RESET pin to 0V and
V
CC
to 0V.
2. Apply 4.5 - 5.5V between V
CC
and GND.
3. Monitor V
CC
, and as soon as V
CC
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
applied to ensure the Prog_enable Signature has been latched.
5. Wait until V
CC
actually reaches 4.5 -5.5V before giving any parallel programming
commands.
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
27.6.2 Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory
locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
• Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
27.6.3 Chip Erase
The Chip Erase will erase the Flash and EEPROM
(1)
memories plus Lock bits. The Lock bits are
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note: 1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Load Command “Chip Erase”